Resistivity and the Hall effect in polycrystalline Ni-Cu and Ta-Cu multi-layered thin films

Reiss G, Vancea J, Kapfberger K, Meier G, Hoffmann H (1989)
Journal of Physics, Condensed Matter 1(7): 1275-1283.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
Download
OA
Autor/in
; ; ; ;
Abstract / Bemerkung
In the present paper the dependences of the resistivity p and the Hall voltage UH of polycrystalline Ni-Cu and Ta-Cu multi-layered thin films on the layer thickness dr are discussed. The thickness dependence of p and UH can be well understood using a simple model in which the layers are considered as parallel resistors, whereby the resistivity of a single layer is enhanced via surface scattering described by the well known Fuchs-Namba size theory. The Hall coefficients are independent of the layer thickness, although the measured Hall voltage varies with dr owing to the enhancement of the individual layer resistivities. For very thin layers, i.e. if the layer thickness becomes smaller than the layer roughness, the experimental data on both p and UH indicate a breakdown of the multi-layered structure to an island-like clustered film structure. For Ni-Cu a crossover from ferroparamagnetic to superparamagnetic behaviour was observed at this critical thickness.
Erscheinungsjahr
1989
Zeitschriftentitel
Journal of Physics, Condensed Matter
Band
1
Ausgabe
7
Seite(n)
1275-1283
ISSN
0953-8984
eISSN
1361-648X
Page URI
https://pub.uni-bielefeld.de/record/1775200

Zitieren

Reiss G, Vancea J, Kapfberger K, Meier G, Hoffmann H. Resistivity and the Hall effect in polycrystalline Ni-Cu and Ta-Cu multi-layered thin films. Journal of Physics, Condensed Matter. 1989;1(7):1275-1283.
Reiss, G., Vancea, J., Kapfberger, K., Meier, G., & Hoffmann, H. (1989). Resistivity and the Hall effect in polycrystalline Ni-Cu and Ta-Cu multi-layered thin films. Journal of Physics, Condensed Matter, 1(7), 1275-1283. doi:10.1088/0953-8984/1/7/011
Reiss, G., Vancea, J., Kapfberger, K., Meier, G., and Hoffmann, H. (1989). Resistivity and the Hall effect in polycrystalline Ni-Cu and Ta-Cu multi-layered thin films. Journal of Physics, Condensed Matter 1, 1275-1283.
Reiss, G., et al., 1989. Resistivity and the Hall effect in polycrystalline Ni-Cu and Ta-Cu multi-layered thin films. Journal of Physics, Condensed Matter, 1(7), p 1275-1283.
G. Reiss, et al., “Resistivity and the Hall effect in polycrystalline Ni-Cu and Ta-Cu multi-layered thin films”, Journal of Physics, Condensed Matter, vol. 1, 1989, pp. 1275-1283.
Reiss, G., Vancea, J., Kapfberger, K., Meier, G., Hoffmann, H.: Resistivity and the Hall effect in polycrystalline Ni-Cu and Ta-Cu multi-layered thin films. Journal of Physics, Condensed Matter. 1, 1275-1283 (1989).
Reiss, Günter, Vancea, Johann, Kapfberger, Klaus, Meier, G., and Hoffmann, Horst. “Resistivity and the Hall effect in polycrystalline Ni-Cu and Ta-Cu multi-layered thin films”. Journal of Physics, Condensed Matter 1.7 (1989): 1275-1283.
Alle Dateien verfügbar unter der/den folgenden Lizenz(en):
Copyright Statement:
This Item is protected by copyright and/or related rights. [...]
Volltext(e)
Access Level
OA Open Access
Zuletzt Hochgeladen
2019-09-06T08:48:17Z
MD5 Prüfsumme
c9ced04a260300b355a2963e4ad39a08