Percolation threshold and mean grain size in AlxSi1-x thin films

Reiss G, Vancea J, Hoffmann H (1985)
Journal of Physics, C: Solid State Physics 18(21): L657-L660.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
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Autor*in
Reiss, GünterUniBi ; Vancea, Johann; Hoffmann, Horst
Abstract / Bemerkung
We determined the critical composition xc of the percolation threshold in polycrystalline AIxSi1-x thin films with a new method, using structural arguments only. The result xc = (0.55 + - 0.05) agrees with the results of the commonly used methods. Moreover, our model explains the wide spread of experimental values of xc as reported in the literature.
Erscheinungsjahr
1985
Zeitschriftentitel
Journal of Physics, C: Solid State Physics
Band
18
Ausgabe
21
Seite(n)
L657-L660
ISSN
0022-3719
Page URI
https://pub.uni-bielefeld.de/record/1775147

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Reiss G, Vancea J, Hoffmann H. Percolation threshold and mean grain size in AlxSi1-x thin films. Journal of Physics, C: Solid State Physics. 1985;18(21):L657-L660.
Reiss, G., Vancea, J., & Hoffmann, H. (1985). Percolation threshold and mean grain size in AlxSi1-x thin films. Journal of Physics, C: Solid State Physics, 18(21), L657-L660. doi:10.1088/0022-3719/18/21/006
Reiss, G., Vancea, J., and Hoffmann, H. (1985). Percolation threshold and mean grain size in AlxSi1-x thin films. Journal of Physics, C: Solid State Physics 18, L657-L660.
Reiss, G., Vancea, J., & Hoffmann, H., 1985. Percolation threshold and mean grain size in AlxSi1-x thin films. Journal of Physics, C: Solid State Physics, 18(21), p L657-L660.
G. Reiss, J. Vancea, and H. Hoffmann, “Percolation threshold and mean grain size in AlxSi1-x thin films”, Journal of Physics, C: Solid State Physics, vol. 18, 1985, pp. L657-L660.
Reiss, G., Vancea, J., Hoffmann, H.: Percolation threshold and mean grain size in AlxSi1-x thin films. Journal of Physics, C: Solid State Physics. 18, L657-L660 (1985).
Reiss, Günter, Vancea, Johann, and Hoffmann, Horst. “Percolation threshold and mean grain size in AlxSi1-x thin films”. Journal of Physics, C: Solid State Physics 18.21 (1985): L657-L660.
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