Percolation threshold and mean grain size in AlxSi1-x thin films

Reiss, Günter; Vancea, Johann; Hoffmann, Horst

Percolation threshold and mean grain size in AlxSi1-x thin films

Reiss G, Vancea J, Hoffmann H (1985)
Journal of Physics, C: Solid State Physics 18(21): L657-L660.

Zeitschriftenaufsatz | Veröffentlicht | Englisch

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Reiss_001.pdf

DOI

https://doi.org/10.1088/0022-3719/18/21/006

URN

urn:nbn:de:0070-pub-17751475

Autor*in

Reiss, Günter^UniBi ; Vancea, Johann; Hoffmann, Horst

Einrichtung

Fakultät für Physik > AG Dünne Schichten & Physik der Nanostrukturen

Abstract / Bemerkung

We determined the critical composition xc of the percolation threshold in polycrystalline AIxSi1-x thin films with a new method, using structural arguments only. The result xc = (0.55 + - 0.05) agrees with the results of the commonly used methods. Moreover, our model explains the wide spread of experimental values of xc as reported in the literature.

Erscheinungsjahr

1985

Zeitschriftentitel

Journal of Physics, C: Solid State Physics

Band

Ausgabe

Seite(n)

L657-L660

ISSN

0022-3719

Page URI

https://pub.uni-bielefeld.de/record/1775147

Zitieren

Reiss G, Vancea J, Hoffmann H. Percolation threshold and mean grain size in AlxSi1-x thin films. Journal of Physics, C: Solid State Physics. 1985;18(21):L657-L660.

Reiss, G., Vancea, J., & Hoffmann, H. (1985). Percolation threshold and mean grain size in AlxSi1-x thin films. Journal of Physics, C: Solid State Physics, 18(21), L657-L660. https://doi.org/10.1088/0022-3719/18/21/006

Reiss, Günter, Vancea, Johann, and Hoffmann, Horst. 1985. “Percolation threshold and mean grain size in AlxSi1-x thin films”. Journal of Physics, C: Solid State Physics 18 (21): L657-L660.

Reiss, G., Vancea, J., and Hoffmann, H. (1985). Percolation threshold and mean grain size in AlxSi1-x thin films. Journal of Physics, C: Solid State Physics 18, L657-L660.

Reiss, G., Vancea, J., & Hoffmann, H., 1985. Percolation threshold and mean grain size in AlxSi1-x thin films. Journal of Physics, C: Solid State Physics, 18(21), p L657-L660.

G. Reiss, J. Vancea, and H. Hoffmann, “Percolation threshold and mean grain size in AlxSi1-x thin films”, Journal of Physics, C: Solid State Physics, vol. 18, 1985, pp. L657-L660.

Reiss, G., Vancea, J., Hoffmann, H.: Percolation threshold and mean grain size in AlxSi1-x thin films. Journal of Physics, C: Solid State Physics. 18, L657-L660 (1985).

Reiss, Günter, Vancea, Johann, and Hoffmann, Horst. “Percolation threshold and mean grain size in AlxSi1-x thin films”. Journal of Physics, C: Solid State Physics 18.21 (1985): L657-L660.

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