PUB - Publikationen an der Universität Bielefeld

MoxSiy/Si multilayers with a period thickness of similar to 7.5 nm and bilayers MoxSiy/Si have been fabricated by e(-) -beam evaporation in UHV at a deposition temperature of 150 degrees C [ 1]. The composition of the as-deposited layer systems and changes in the composition after baking the samples have been studied with high-resolution RBS. For a multilayer with a mixing ratio y/x similar or equal to 2, no interdiffusion is observed up to a baking temperature of 830 degrees C. For samples with a mixing ratio y/x similar or equal to 1, diffusion is observed up to a baking temperature of 630 degrees C, resulting in a mixing ratio close to y/x similar or equal to 2. This mixing ratio remains almost stable up to similar to 830 degrees C, and considerable interdiffusion is only observed in those systems where regions with a mixing ratio smaller than 2 still exist. Possible reasons for the high thermal stability of the samples are the lack of a concentration gradient for Si in the system Si/Mo0.(3) over barSi0.(6) over bar and/orthe crystallization of MoSi2.