Influence of annealing temperature and thickness of a CoFeB middle layer on the tunnel magnetoresistance of MgO based double barrier magnetic tunnel junctions
Reinartz A, Schmalhorst J-M, Reiss G (2009)
JOURNAL OF APPLIED PHYSICS 105(1): 014510.
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Einrichtung
Abstract / Bemerkung
Magnetic tunnel junctions with two MgO barriers separated by a free CoFeB middle electrode have been investigated. As compared to single barrier junctions, the magnetoresistance increase due to annealing was smaller for these systems. The Neel coupling induced hysteresis shift of the middle electrode decreased, while coercivity and exchange bias field of the pinned ferromagnetic layers increased by increasing annealing temperature. For decreasing thickness of the middle electrode we observed that the contribution of the magnetoresistance of the upper barrier decreases probably due to the islandlike growth mode of CoFeB on MgO. Besides we found an increasing hysteresis shift of the middle electrode and additional dips in the major loops caused by magnetic interactions of the free middle electrode with the top pinned layer. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3065521]
Erscheinungsjahr
2009
Zeitschriftentitel
JOURNAL OF APPLIED PHYSICS
Band
105
Ausgabe
1
Art.-Nr.
014510
ISSN
0021-8979
Page URI
https://pub.uni-bielefeld.de/record/1636057
Zitieren
Reinartz A, Schmalhorst J-M, Reiss G. Influence of annealing temperature and thickness of a CoFeB middle layer on the tunnel magnetoresistance of MgO based double barrier magnetic tunnel junctions. JOURNAL OF APPLIED PHYSICS. 2009;105(1): 014510.
Reinartz, A., Schmalhorst, J. - M., & Reiss, G. (2009). Influence of annealing temperature and thickness of a CoFeB middle layer on the tunnel magnetoresistance of MgO based double barrier magnetic tunnel junctions. JOURNAL OF APPLIED PHYSICS, 105(1), 014510. https://doi.org/10.1063/1.3065521
Reinartz, Andre, Schmalhorst, Jan-Michael, and Reiss, Günter. 2009. “Influence of annealing temperature and thickness of a CoFeB middle layer on the tunnel magnetoresistance of MgO based double barrier magnetic tunnel junctions”. JOURNAL OF APPLIED PHYSICS 105 (1): 014510.
Reinartz, A., Schmalhorst, J. - M., and Reiss, G. (2009). Influence of annealing temperature and thickness of a CoFeB middle layer on the tunnel magnetoresistance of MgO based double barrier magnetic tunnel junctions. JOURNAL OF APPLIED PHYSICS 105:014510.
Reinartz, A., Schmalhorst, J.-M., & Reiss, G., 2009. Influence of annealing temperature and thickness of a CoFeB middle layer on the tunnel magnetoresistance of MgO based double barrier magnetic tunnel junctions. JOURNAL OF APPLIED PHYSICS, 105(1): 014510.
A. Reinartz, J.-M. Schmalhorst, and G. Reiss, “Influence of annealing temperature and thickness of a CoFeB middle layer on the tunnel magnetoresistance of MgO based double barrier magnetic tunnel junctions”, JOURNAL OF APPLIED PHYSICS, vol. 105, 2009, : 014510.
Reinartz, A., Schmalhorst, J.-M., Reiss, G.: Influence of annealing temperature and thickness of a CoFeB middle layer on the tunnel magnetoresistance of MgO based double barrier magnetic tunnel junctions. JOURNAL OF APPLIED PHYSICS. 105, : 014510 (2009).
Reinartz, Andre, Schmalhorst, Jan-Michael, and Reiss, Günter. “Influence of annealing temperature and thickness of a CoFeB middle layer on the tunnel magnetoresistance of MgO based double barrier magnetic tunnel junctions”. JOURNAL OF APPLIED PHYSICS 105.1 (2009): 014510.
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