Phase defect inspection of multilayer masks for 13.5 nm optical lithography using PEEM in a standing wave mode

Maul J, Lin J, Oelsner A, Valdaitsev D, Weber N, Escher M, Merkel M, Seitz H, Heinzmann U, Kleineberg U, Schoenhense G (2007)
SURFACE SCIENCE 601(20): 4758-4763.

Konferenzbeitrag | Veröffentlicht | Englisch
 
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Abstract / Bemerkung
We report on recent developments of an "at wavelength" full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet lithography (EUVL). Our approach uses photoemission electron microscopy (PEEM) in a near normal incidence mode at 13.5 nut wavelength to image the photoemission induced by the EUV wave field on the multilayer blank surface. We analyze buried defects on Mo/Si multilayer samples down to a lateral size of 50 nm and report on first, results obtained from a six inches mask blank prototype as prerequisite for industrial usage. (c) 2007 Elsevier B.V. All rights reserved.
Stichworte
extreme ultraviolet lithography (EUVL); microscopy (PEEM); EUV-PEEM; defect analysis; photoemission electron; multilayer mask blanks
Erscheinungsjahr
2007
Band
601
Ausgabe
20
Seite(n)
4758-4763
ISSN
0039-6028
Page URI
https://pub.uni-bielefeld.de/record/1631440

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Maul J, Lin J, Oelsner A, et al. Phase defect inspection of multilayer masks for 13.5 nm optical lithography using PEEM in a standing wave mode. SURFACE SCIENCE. 2007;601(20):4758-4763.
Maul, J., Lin, J., Oelsner, A., Valdaitsev, D., Weber, N., Escher, M., Merkel, M., et al. (2007). Phase defect inspection of multilayer masks for 13.5 nm optical lithography using PEEM in a standing wave mode. SURFACE SCIENCE, 601(20), 4758-4763. doi:10.1016/j.susc.2007.05.041
Maul, J., Lin, J., Oelsner, A., Valdaitsev, D., Weber, N., Escher, M., Merkel, M., Seitz, H., Heinzmann, U., Kleineberg, U., et al. (2007). Phase defect inspection of multilayer masks for 13.5 nm optical lithography using PEEM in a standing wave mode. SURFACE SCIENCE 601, 4758-4763.
Maul, J., et al., 2007. Phase defect inspection of multilayer masks for 13.5 nm optical lithography using PEEM in a standing wave mode. SURFACE SCIENCE, 601(20), p 4758-4763.
J. Maul, et al., “Phase defect inspection of multilayer masks for 13.5 nm optical lithography using PEEM in a standing wave mode”, SURFACE SCIENCE, vol. 601, 2007, pp. 4758-4763.
Maul, J., Lin, J., Oelsner, A., Valdaitsev, D., Weber, N., Escher, M., Merkel, M., Seitz, H., Heinzmann, U., Kleineberg, U., Schoenhense, G.: Phase defect inspection of multilayer masks for 13.5 nm optical lithography using PEEM in a standing wave mode. SURFACE SCIENCE. 601, 4758-4763 (2007).
Maul, J., Lin, J., Oelsner, A., Valdaitsev, D., Weber, N., Escher, M., Merkel, M., Seitz, H., Heinzmann, Ulrich, Kleineberg, U., and Schoenhense, G. “Phase defect inspection of multilayer masks for 13.5 nm optical lithography using PEEM in a standing wave mode”. SURFACE SCIENCE 601.20 (2007): 4758-4763.