Application of reactive ion etching to the fabrication of microstructure on Mo/Si multilayer
Le ZC, Dreeskornfeld L, Rahn S, Segler R, Kleineberg U, Heinzmann U (1999)
CHINESE PHYSICS LETTERS 16(9): 665-666.
Zeitschriftenaufsatz
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Autor*in
Le, ZC;
Dreeskornfeld, L;
Rahn, S;
Segler, R;
Kleineberg, U;
Heinzmann, UlrichUniBi
Abstract / Bemerkung
Mo/Si multilayer mirrors (30 periods, doublelayer thickness 7nm) with the AZ-PF514 resist pattern whose smallest lines and spaces structure was 0.5 mu m were etched by reactive ion etching (PIE) in a fluorinated plasma. The etch rate, selectivity and etch profile were investigated as a function of the gas mixture, pressure, and plasma rf power. The groove depth and the etch profile were investigated by an atomic force microscope before RIE, after RIE and after resist removal.
Erscheinungsjahr
1999
Zeitschriftentitel
CHINESE PHYSICS LETTERS
Band
16
Ausgabe
9
Seite(n)
665-666
ISSN
0256-307X
eISSN
1741-3540
Page URI
https://pub.uni-bielefeld.de/record/1621602
Zitieren
Le ZC, Dreeskornfeld L, Rahn S, Segler R, Kleineberg U, Heinzmann U. Application of reactive ion etching to the fabrication of microstructure on Mo/Si multilayer. CHINESE PHYSICS LETTERS. 1999;16(9):665-666.
Le, Z. C., Dreeskornfeld, L., Rahn, S., Segler, R., Kleineberg, U., & Heinzmann, U. (1999). Application of reactive ion etching to the fabrication of microstructure on Mo/Si multilayer. CHINESE PHYSICS LETTERS, 16(9), 665-666. https://doi.org/10.1088/0256-307X/16/9/016
Le, ZC, Dreeskornfeld, L, Rahn, S, Segler, R, Kleineberg, U, and Heinzmann, Ulrich. 1999. “Application of reactive ion etching to the fabrication of microstructure on Mo/Si multilayer”. CHINESE PHYSICS LETTERS 16 (9): 665-666.
Le, Z. C., Dreeskornfeld, L., Rahn, S., Segler, R., Kleineberg, U., and Heinzmann, U. (1999). Application of reactive ion etching to the fabrication of microstructure on Mo/Si multilayer. CHINESE PHYSICS LETTERS 16, 665-666.
Le, Z.C., et al., 1999. Application of reactive ion etching to the fabrication of microstructure on Mo/Si multilayer. CHINESE PHYSICS LETTERS, 16(9), p 665-666.
Z.C. Le, et al., “Application of reactive ion etching to the fabrication of microstructure on Mo/Si multilayer”, CHINESE PHYSICS LETTERS, vol. 16, 1999, pp. 665-666.
Le, Z.C., Dreeskornfeld, L., Rahn, S., Segler, R., Kleineberg, U., Heinzmann, U.: Application of reactive ion etching to the fabrication of microstructure on Mo/Si multilayer. CHINESE PHYSICS LETTERS. 16, 665-666 (1999).
Le, ZC, Dreeskornfeld, L, Rahn, S, Segler, R, Kleineberg, U, and Heinzmann, Ulrich. “Application of reactive ion etching to the fabrication of microstructure on Mo/Si multilayer”. CHINESE PHYSICS LETTERS 16.9 (1999): 665-666.
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