Temperature stability of Co/Al2O3/Co junctions

Schmalhorst J-M, Brückl H, Reiss G, Vieth M, Gieres G, Wecker J (2000)
In: Journal of Applied Physics. JOURNAL OF APPLIED PHYSICS, 87(9). AMER INST PHYSICS: 5191-5193.

Konferenzbeitrag | Veröffentlicht | Englisch
 
Download
Es wurden keine Dateien hochgeladen. Nur Publikationsnachweis!
Autor*in
Schmalhorst, Jan-MichaelUniBi ; Brückl, Hubert; Reiss, GünterUniBi ; Vieth, M; Gieres, G; Wecker, J
Abstract / Bemerkung
The temperature stability of magnetic tunnel junctions is an important requirement for the fabrication of magnetic memory devices and the integration in the semiconductor process technology. We have investigated the temperature evolution of the tunneling magnetoresistance (TMR) and the structural properties by isochronal annealing experiments up to 750 K. The magnetically hard electrode of the junction consists of an artificial antiferromagnet Co/Cu/Co, the soft electrode of a Co/Fe bilayer. The tunnel barriers are formed by plasma oxidized Al. The tunnel junctions have TMR signals up to 22% at room temperature. Besides a small increase of the TMR signal after annealing up to 480 K, a first decrease at 530 K and a breakdown beyond 600 K are found. This behavior can be attributed to structural changes of the junctions. Auger depth profiles show an unaltered Al2O3 barrier up to 600 K, but the beginning of interdiffusion processes within the magnetic electrodes already at 540 K and above. (C) 2000 American Institute of Physics. [S0021-8979(00)32208-3].
Erscheinungsjahr
2000
Titel des Konferenzbandes
Journal of Applied Physics
Band
87
Ausgabe
9
Seite(n)
5191-5193
ISSN
0021-8979
Page URI
https://pub.uni-bielefeld.de/record/1620060

Zitieren

Schmalhorst J-M, Brückl H, Reiss G, Vieth M, Gieres G, Wecker J. Temperature stability of Co/Al2O3/Co junctions. In: Journal of Applied Physics. JOURNAL OF APPLIED PHYSICS. Vol 87. AMER INST PHYSICS; 2000: 5191-5193.
Schmalhorst, J. - M., Brückl, H., Reiss, G., Vieth, M., Gieres, G., & Wecker, J. (2000). Temperature stability of Co/Al2O3/Co junctions. Journal of Applied Physics, JOURNAL OF APPLIED PHYSICS, 87, 5191-5193. AMER INST PHYSICS. https://doi.org/10.1063/1.373291
Schmalhorst, J. - M., Brückl, H., Reiss, G., Vieth, M., Gieres, G., and Wecker, J. (2000). “Temperature stability of Co/Al2O3/Co junctions” in Journal of Applied Physics JOURNAL OF APPLIED PHYSICS, vol. 87, (AMER INST PHYSICS), 5191-5193.
Schmalhorst, J.-M., et al., 2000. Temperature stability of Co/Al2O3/Co junctions. In Journal of Applied Physics. JOURNAL OF APPLIED PHYSICS. no.87 AMER INST PHYSICS, pp. 5191-5193.
J.-M. Schmalhorst, et al., “Temperature stability of Co/Al2O3/Co junctions”, Journal of Applied Physics, JOURNAL OF APPLIED PHYSICS, vol. 87, AMER INST PHYSICS, 2000, pp.5191-5193.
Schmalhorst, J.-M., Brückl, H., Reiss, G., Vieth, M., Gieres, G., Wecker, J.: Temperature stability of Co/Al2O3/Co junctions. Journal of Applied Physics. JOURNAL OF APPLIED PHYSICS. 87, p. 5191-5193. AMER INST PHYSICS (2000).
Schmalhorst, Jan-Michael, Brückl, Hubert, Reiss, Günter, Vieth, M, Gieres, G, and Wecker, J. “Temperature stability of Co/Al2O3/Co junctions”. Journal of Applied Physics. AMER INST PHYSICS, 2000.Vol. 87. JOURNAL OF APPLIED PHYSICS. 5191-5193.

Export

Markieren/ Markierung löschen
Markierte Publikationen

Open Data PUB

Web of Science

Dieser Datensatz im Web of Science®

Suchen in

Google Scholar