Switching stability of magnetic tunnel junctions with an artificial antiferromagnet
Schmalhorst J-M, Brückl H, Reiss G, Kinder R, Gieres G, Wecker J (2000)
APPLIED PHYSICS LETTERS 77(21): 3456-3458.
Zeitschriftenaufsatz
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Autor*in
Schmalhorst, Jan-MichaelUniBi 
;
Brückl, Hubert;
Reiss, GünterUniBi ;
Kinder, R;
Gieres, G;
Wecker, J
;
Brückl, Hubert;
Reiss, GünterUniBi ;
Kinder, R;
Gieres, G;
Wecker, JAbstract / Bemerkung
Avoiding fatigue in the switching of magnetic tunnel junctions is crucial for their long-term use in nonvolatile magnetic memories. We compare the switching stability of two types of junctions with different soft layers: Fe or Ni81Fe19, both with Co dusting at the barrier interface. The magnetically hard electrode is a Co/Cu/Co artificial antiferromagnet. While the tunneling magnetoresistance (TMR) remains unchanged after 10(4) cycles in a 4 kA/m rotating field, it decreases by more than 45% due to uniaxial switching. Fringing fields of domain walls in the soft layer and an intrinsic instability of Co/Cu/Co are identified as the main reasons. Magnetization reversal by two perpendicular switching pulses avoids this magnetic degradation and maintains a full TMR signal. (C) 2000 American Institute of Physics. [S0003-6951(00)01447-9].
Erscheinungsjahr
2000
Zeitschriftentitel
APPLIED PHYSICS LETTERS
Band
77
Ausgabe
21
Seite(n)
3456-3458
ISSN
0003-6951
Page URI
https://pub.uni-bielefeld.de/record/1618576
Zitieren
Schmalhorst J-M, Brückl H, Reiss G, Kinder R, Gieres G, Wecker J. Switching stability of magnetic tunnel junctions with an artificial antiferromagnet. APPLIED PHYSICS LETTERS. 2000;77(21):3456-3458.
Schmalhorst, J. - M., Brückl, H., Reiss, G., Kinder, R., Gieres, G., & Wecker, J. (2000). Switching stability of magnetic tunnel junctions with an artificial antiferromagnet. APPLIED PHYSICS LETTERS, 77(21), 3456-3458. https://doi.org/10.1063/1.1327272
Schmalhorst, Jan-Michael, Brückl, Hubert, Reiss, Günter, Kinder, R, Gieres, G, and Wecker, J. 2000. “Switching stability of magnetic tunnel junctions with an artificial antiferromagnet”. APPLIED PHYSICS LETTERS 77 (21): 3456-3458.
Schmalhorst, J. - M., Brückl, H., Reiss, G., Kinder, R., Gieres, G., and Wecker, J. (2000). Switching stability of magnetic tunnel junctions with an artificial antiferromagnet. APPLIED PHYSICS LETTERS 77, 3456-3458.
Schmalhorst, J.-M., et al., 2000. Switching stability of magnetic tunnel junctions with an artificial antiferromagnet. APPLIED PHYSICS LETTERS, 77(21), p 3456-3458.
J.-M. Schmalhorst, et al., “Switching stability of magnetic tunnel junctions with an artificial antiferromagnet”, APPLIED PHYSICS LETTERS, vol. 77, 2000, pp. 3456-3458.
Schmalhorst, J.-M., Brückl, H., Reiss, G., Kinder, R., Gieres, G., Wecker, J.: Switching stability of magnetic tunnel junctions with an artificial antiferromagnet. APPLIED PHYSICS LETTERS. 77, 3456-3458 (2000).
Schmalhorst, Jan-Michael, Brückl, Hubert, Reiss, Günter, Kinder, R, Gieres, G, and Wecker, J. “Switching stability of magnetic tunnel junctions with an artificial antiferromagnet”. APPLIED PHYSICS LETTERS 77.21 (2000): 3456-3458.
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