Easy formation of indium-silicon bonds: reaction of decamethylsilicocene with trimethylindium

Kuhler T, Jutzi P, Stammler A, Stammler H-G (2001)
CHEMICAL COMMUNICATIONS (6): 539-540.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
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Abstract / Bemerkung
The reaction of decamethylsilicocene 1 with trimethylindium yields the disilyl indium compound [Cp*Si-2(Me)](2)InMe (2) in nearly quantitative yield; 2 is characterised by H-1, C-13 and Si-29 NMR and microanalytical data and by X-ray crystallography.
Erscheinungsjahr
2001
Zeitschriftentitel
CHEMICAL COMMUNICATIONS
Ausgabe
6
Seite(n)
539-540
ISSN
1359-7345
eISSN
1364-548X
Page URI
https://pub.uni-bielefeld.de/record/1617724

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Kuhler T, Jutzi P, Stammler A, Stammler H-G. Easy formation of indium-silicon bonds: reaction of decamethylsilicocene with trimethylindium. CHEMICAL COMMUNICATIONS. 2001;(6):539-540.
Kuhler, T., Jutzi, P., Stammler, A., & Stammler, H. - G. (2001). Easy formation of indium-silicon bonds: reaction of decamethylsilicocene with trimethylindium. CHEMICAL COMMUNICATIONS(6), 539-540. https://doi.org/10.1039/b009839f
Kuhler, T., Jutzi, P., Stammler, A., and Stammler, H. - G. (2001). Easy formation of indium-silicon bonds: reaction of decamethylsilicocene with trimethylindium. CHEMICAL COMMUNICATIONS, 539-540.
Kuhler, T., et al., 2001. Easy formation of indium-silicon bonds: reaction of decamethylsilicocene with trimethylindium. CHEMICAL COMMUNICATIONS, (6), p 539-540.
T. Kuhler, et al., “Easy formation of indium-silicon bonds: reaction of decamethylsilicocene with trimethylindium”, CHEMICAL COMMUNICATIONS, 2001, pp. 539-540.
Kuhler, T., Jutzi, P., Stammler, A., Stammler, H.-G.: Easy formation of indium-silicon bonds: reaction of decamethylsilicocene with trimethylindium. CHEMICAL COMMUNICATIONS. 539-540 (2001).
Kuhler, T, Jutzi, Peter, Stammler, A, and Stammler, Hans-Georg. “Easy formation of indium-silicon bonds: reaction of decamethylsilicocene with trimethylindium”. CHEMICAL COMMUNICATIONS 6 (2001): 539-540.

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