On the importance of gas phase chemistry in two CVD systems: Deposition of silicon and diamond

Atakan B, Kohse-Höinghaus K (2001)
ZEITSCHRIFT FUR METALLKUNDE 92(10): 1139-1144.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
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Abstract / Bemerkung
Chemical vapor deposition (CVD) is an important method to produce thin films on various substrate materials. Most work concentrates on the quality of the resulting materials and on the surface chemistry, while gas phase chemistry is often overlooked. The present article discusses the role of gas phase chemistry for CVD processes at high growth rates by analysing two deposition systems. In silicon CVD, the gas phase reactions reduce the growth rate, while diamond CVD is impossible without gas phase activation prior to deposition. In both cases, a fundamental knowledge of these gas phase processes assists in obtaining high growth rates and in optimizing the CVD process.
Stichworte
gas phase chemistry; chemical vapor deposition; diamond; silicon
Erscheinungsjahr
2001
Zeitschriftentitel
ZEITSCHRIFT FUR METALLKUNDE
Band
92
Ausgabe
10
Seite(n)
1139-1144
ISSN
0044-3093
Page URI
https://pub.uni-bielefeld.de/record/1615311

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Atakan B, Kohse-Höinghaus K. On the importance of gas phase chemistry in two CVD systems: Deposition of silicon and diamond. ZEITSCHRIFT FUR METALLKUNDE. 2001;92(10):1139-1144.
Atakan, B., & Kohse-Höinghaus, K. (2001). On the importance of gas phase chemistry in two CVD systems: Deposition of silicon and diamond. ZEITSCHRIFT FUR METALLKUNDE, 92(10), 1139-1144.
Atakan, B., and Kohse-Höinghaus, K. (2001). On the importance of gas phase chemistry in two CVD systems: Deposition of silicon and diamond. ZEITSCHRIFT FUR METALLKUNDE 92, 1139-1144.
Atakan, B., & Kohse-Höinghaus, K., 2001. On the importance of gas phase chemistry in two CVD systems: Deposition of silicon and diamond. ZEITSCHRIFT FUR METALLKUNDE, 92(10), p 1139-1144.
B. Atakan and K. Kohse-Höinghaus, “On the importance of gas phase chemistry in two CVD systems: Deposition of silicon and diamond”, ZEITSCHRIFT FUR METALLKUNDE, vol. 92, 2001, pp. 1139-1144.
Atakan, B., Kohse-Höinghaus, K.: On the importance of gas phase chemistry in two CVD systems: Deposition of silicon and diamond. ZEITSCHRIFT FUR METALLKUNDE. 92, 1139-1144 (2001).
Atakan, Burak, and Kohse-Höinghaus, Katharina. “On the importance of gas phase chemistry in two CVD systems: Deposition of silicon and diamond”. ZEITSCHRIFT FUR METALLKUNDE 92.10 (2001): 1139-1144.