Influence of ion bombardment on transport properties and exchange bias in magnetic tunnel junctions
Schmalhorst J-M, Hoink V, Reiss G, Engel D, Junk D, Schindler A, Ehresmann A, Schmoranzer H (2003)
JOURNAL OF APPLIED PHYSICS 94(9): 5556-5558.
Zeitschriftenaufsatz
| Veröffentlicht | Englisch
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Autor*in
Schmalhorst, Jan-MichaelUniBi 
;
Hoink, V;
Reiss, GünterUniBi ;
Engel, D;
Junk, D;
Schindler, A;
Ehresmann, A;
Schmoranzer, H
;
Hoink, V;
Reiss, GünterUniBi ;
Engel, D;
Junk, D;
Schindler, A;
Ehresmann, A;
Schmoranzer, HAbstract / Bemerkung
Magnetic tunnel junctions (Mn83Ir17/Co70Fe30/AlOx/Ni80Fe20) were bombarded by 10-20 keV He+ ions in an applied magnetic field to manipulate the exchange bias of the magnetically hard electrode. The tunneling magnetoresistance of the bombarded junctions is up to 37.8% for ion doses high enough to ensure a well defined exchange bias. This should allow the preparation of high quality tunnel junctions with magnetic micropatterned hard electrodes. For very high ion doses the tunneling magnetoresistance starts to decrease, whereas the area resistance product increases. Possible explanations based on structural alterations of the tunneling barrier are discussed. (C) 2003 American Institute of Physics.
Erscheinungsjahr
2003
Zeitschriftentitel
JOURNAL OF APPLIED PHYSICS
Band
94
Ausgabe
9
Seite(n)
5556-5558
ISSN
0021-8979
Page URI
https://pub.uni-bielefeld.de/record/1609880
Zitieren
Schmalhorst J-M, Hoink V, Reiss G, et al. Influence of ion bombardment on transport properties and exchange bias in magnetic tunnel junctions. JOURNAL OF APPLIED PHYSICS. 2003;94(9):5556-5558.
Schmalhorst, J. - M., Hoink, V., Reiss, G., Engel, D., Junk, D., Schindler, A., Ehresmann, A., et al. (2003). Influence of ion bombardment on transport properties and exchange bias in magnetic tunnel junctions. JOURNAL OF APPLIED PHYSICS, 94(9), 5556-5558. https://doi.org/10.1063/1.1614846
Schmalhorst, Jan-Michael, Hoink, V, Reiss, Günter, Engel, D, Junk, D, Schindler, A, Ehresmann, A, and Schmoranzer, H. 2003. “Influence of ion bombardment on transport properties and exchange bias in magnetic tunnel junctions”. JOURNAL OF APPLIED PHYSICS 94 (9): 5556-5558.
Schmalhorst, J. - M., Hoink, V., Reiss, G., Engel, D., Junk, D., Schindler, A., Ehresmann, A., and Schmoranzer, H. (2003). Influence of ion bombardment on transport properties and exchange bias in magnetic tunnel junctions. JOURNAL OF APPLIED PHYSICS 94, 5556-5558.
Schmalhorst, J.-M., et al., 2003. Influence of ion bombardment on transport properties and exchange bias in magnetic tunnel junctions. JOURNAL OF APPLIED PHYSICS, 94(9), p 5556-5558.
J.-M. Schmalhorst, et al., “Influence of ion bombardment on transport properties and exchange bias in magnetic tunnel junctions”, JOURNAL OF APPLIED PHYSICS, vol. 94, 2003, pp. 5556-5558.
Schmalhorst, J.-M., Hoink, V., Reiss, G., Engel, D., Junk, D., Schindler, A., Ehresmann, A., Schmoranzer, H.: Influence of ion bombardment on transport properties and exchange bias in magnetic tunnel junctions. JOURNAL OF APPLIED PHYSICS. 94, 5556-5558 (2003).
Schmalhorst, Jan-Michael, Hoink, V, Reiss, Günter, Engel, D, Junk, D, Schindler, A, Ehresmann, A, and Schmoranzer, H. “Influence of ion bombardment on transport properties and exchange bias in magnetic tunnel junctions”. JOURNAL OF APPLIED PHYSICS 94.9 (2003): 5556-5558.
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