Magnetoresistance effect in asymmetric dual spin-valves - a device for three-state logic

Lucinski T, Urbaniak M, Brückl H, Hütten A, Heitmann S, Reiss G (2004)
In: Journal of Magnetism and Magnetic Materials. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 272. ELSEVIER SCIENCE BV: 1889-1891.

Konferenzbeitrag | Veröffentlicht | Englisch
 
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Autor*in
Lucinski, T; Urbaniak, M; Brückl, Hubert; Hütten, AndreasUniBi; Heitmann, S; Reiss, GünterUniBi
Abstract / Bemerkung
We show that for asymmetric dual spin-valves MnIr/CoFe1/Cu/Py1/Cu/Py2/CoFe2/MnIr (Py denotes Ni80Fe20 Permalloy alloy), the application of two different ferromagnetic materials as pinned layers can result in appearance of three well-separated stages in giant magnetoresistance (GMR) effect reflecting three different and almost independent magnetization reversal processes. For the correct choice of the constituent layer thicknesses, the GMR amplitude of the dual spin-valve can depend on the field sweep direction. (C) 2003 Elsevier B.V. All rights reserved.
Stichworte
spin-valve; multilavers; giant magnetoresistance
Erscheinungsjahr
2004
Titel des Konferenzbandes
Journal of Magnetism and Magnetic Materials
Band
272
Seite(n)
1889-1891
ISSN
0304-8853
Page URI
https://pub.uni-bielefeld.de/record/1607455

Zitieren

Lucinski T, Urbaniak M, Brückl H, Hütten A, Heitmann S, Reiss G. Magnetoresistance effect in asymmetric dual spin-valves - a device for three-state logic. In: Journal of Magnetism and Magnetic Materials. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS. Vol 272. ELSEVIER SCIENCE BV; 2004: 1889-1891.
Lucinski, T., Urbaniak, M., Brückl, H., Hütten, A., Heitmann, S., & Reiss, G. (2004). Magnetoresistance effect in asymmetric dual spin-valves - a device for three-state logic. Journal of Magnetism and Magnetic Materials, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 272, 1889-1891. ELSEVIER SCIENCE BV. doi:10.1016/j.jmmm.2003.12.1249
Lucinski, T., Urbaniak, M., Brückl, H., Hütten, A., Heitmann, S., and Reiss, G. (2004). “Magnetoresistance effect in asymmetric dual spin-valves - a device for three-state logic” in Journal of Magnetism and Magnetic Materials JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, vol. 272, (ELSEVIER SCIENCE BV), 1889-1891.
Lucinski, T., et al., 2004. Magnetoresistance effect in asymmetric dual spin-valves - a device for three-state logic. In Journal of Magnetism and Magnetic Materials. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS. no.272 ELSEVIER SCIENCE BV, pp. 1889-1891.
T. Lucinski, et al., “Magnetoresistance effect in asymmetric dual spin-valves - a device for three-state logic”, Journal of Magnetism and Magnetic Materials, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, vol. 272, ELSEVIER SCIENCE BV, 2004, pp.1889-1891.
Lucinski, T., Urbaniak, M., Brückl, H., Hütten, A., Heitmann, S., Reiss, G.: Magnetoresistance effect in asymmetric dual spin-valves - a device for three-state logic. Journal of Magnetism and Magnetic Materials. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS. 272, p. 1889-1891. ELSEVIER SCIENCE BV (2004).
Lucinski, T, Urbaniak, M, Brückl, Hubert, Hütten, Andreas, Heitmann, S, and Reiss, Günter. “Magnetoresistance effect in asymmetric dual spin-valves - a device for three-state logic”. Journal of Magnetism and Magnetic Materials. ELSEVIER SCIENCE BV, 2004.Vol. 272. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS. 1889-1891.

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