Temperature dependence of the resistance of magnetic tunnel junctions with MgO barrier

Kou X, Schmalhorst J-M, Thomas A, Reiss G (2006)
APPLIED PHYSICS LETTERS 88(21): 212115.

Zeitschriftenaufsatz | Veröffentlicht | Englisch
 
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DOI
Autor*in
Kou, X.; Schmalhorst, Jan-MichaelUniBi ; Thomas, AndyUniBi ; Reiss, GünterUniBi
Einrichtung
Fakultät für Physik > AG Dünne Schichten & Physik der Nanostrukturen
Centrum für Biotechnologie > Arbeitsgruppe G. Reiss
Abstract / Bemerkung
The temperature dependent tunneling resistance of magnetic tunnel junctions with MgO barriers was characterized. In the junctions prepared by magnetron sputtering, the tunnel magnetoresistance decreases with increasing temperature. Various contributions to the tunnel conductance are discussed using different models. Not only the direct elastic tunneling contributes to the temperature dependence of tunnel magnetoresistance, but also the assisted, spin-independent tunneling plays an important role in determining the temperature dependent behavior in our magnetic tunneling junctions. The process is further investigated assuming magnon and phonon assisted tunneling and compared to junctions with alumina tunnel barrier. (c) 2006 American Institute of Physics.
Erscheinungsjahr
2006
Zeitschriftentitel
APPLIED PHYSICS LETTERS
Band
88
Ausgabe
21
Seite(n)
212115
ISSN
0003-6951
Page URI
https://pub.uni-bielefeld.de/record/1599180

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Kou X, Schmalhorst J-M, Thomas A, Reiss G. Temperature dependence of the resistance of magnetic tunnel junctions with MgO barrier. APPLIED PHYSICS LETTERS. 2006;88(21):212115.
Kou, X., Schmalhorst, J. - M., Thomas, A., & Reiss, G. (2006). Temperature dependence of the resistance of magnetic tunnel junctions with MgO barrier. APPLIED PHYSICS LETTERS, 88(21), 212115. https://doi.org/10.1063/1.2206680
Kou, X., Schmalhorst, Jan-Michael, Thomas, Andy, and Reiss, Günter. 2006. “Temperature dependence of the resistance of magnetic tunnel junctions with MgO barrier”. APPLIED PHYSICS LETTERS 88 (21): 212115.
Kou, X., Schmalhorst, J. - M., Thomas, A., and Reiss, G. (2006). Temperature dependence of the resistance of magnetic tunnel junctions with MgO barrier. APPLIED PHYSICS LETTERS 88, 212115.
Kou, X., et al., 2006. Temperature dependence of the resistance of magnetic tunnel junctions with MgO barrier. APPLIED PHYSICS LETTERS, 88(21), p 212115.
X. Kou, et al., “Temperature dependence of the resistance of magnetic tunnel junctions with MgO barrier”, APPLIED PHYSICS LETTERS, vol. 88, 2006, pp. 212115.
Kou, X., Schmalhorst, J.-M., Thomas, A., Reiss, G.: Temperature dependence of the resistance of magnetic tunnel junctions with MgO barrier. APPLIED PHYSICS LETTERS. 88, 212115 (2006).
Kou, X., Schmalhorst, Jan-Michael, Thomas, Andy, and Reiss, Günter. “Temperature dependence of the resistance of magnetic tunnel junctions with MgO barrier”. APPLIED PHYSICS LETTERS 88.21 (2006): 212115.
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