Spin-electronic devices with half-metallic Heusler alloys

Hütten A, Schmalhorst J-M, Thomas A, Kaemmerer S, Sacher M, Ebke D, Liu N-N, Kou X, Reiss G (2006)
JOURNAL OF ALLOYS AND COMPOUNDS 423(1-2): 148-152.

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Abstract / Bemerkung
We have integrated Co2MnSi as a representative of the full-Heusler compound family as one magnetic electrode into technological relevant magnetic tunnel junctions. The resulting tunnel magnetoresistance at 20 K currently achieved is 108% associated with a Co2MnSi spin polarization of 70% clearly proving that Co2MnSi is already superior to 3d-based magnetic elements or their alloys. The corresponding room temperature value of the tunnel magnetoresistance is 42%. The presence of a step like tunnel barrier which is already created during plasma oxidation, while preparing the AlOx, tunnel barrier, has been identified as the current limitation to achieve larger tunnel magnetoresistance and hence larger spin polarization and is a direct consequence of the oxygen affinity of the Co2MnSi-Heusler element Mn. In addition preliminarily results on Co2FeSi as a new full-Heusler compound integrated as magnetic electrode into technological relevant magnetic tunnel junctions are shown and discussed. (c) 2006 Elsevier B.V. All rights reserved.
Stichworte
spin-electronic devices; Heusler alloys; tunnel magnetoresistance
Erscheinungsjahr
2006
Band
423
Ausgabe
1-2
Seite(n)
148-152
ISSN
0925-8388
Page URI
https://pub.uni-bielefeld.de/record/1597432

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Hütten A, Schmalhorst J-M, Thomas A, et al. Spin-electronic devices with half-metallic Heusler alloys. JOURNAL OF ALLOYS AND COMPOUNDS. 2006;423(1-2):148-152.
Hütten, A., Schmalhorst, J. - M., Thomas, A., Kaemmerer, S., Sacher, M., Ebke, D., Liu, N. - N., et al. (2006). Spin-electronic devices with half-metallic Heusler alloys. JOURNAL OF ALLOYS AND COMPOUNDS, 423(1-2), 148-152. doi:10.1016/j.jallcom.2005.12.106
Hütten, A., Schmalhorst, J. - M., Thomas, A., Kaemmerer, S., Sacher, M., Ebke, D., Liu, N. - N., Kou, X., and Reiss, G. (2006). Spin-electronic devices with half-metallic Heusler alloys. JOURNAL OF ALLOYS AND COMPOUNDS 423, 148-152.
Hütten, A., et al., 2006. Spin-electronic devices with half-metallic Heusler alloys. JOURNAL OF ALLOYS AND COMPOUNDS, 423(1-2), p 148-152.
A. Hütten, et al., “Spin-electronic devices with half-metallic Heusler alloys”, JOURNAL OF ALLOYS AND COMPOUNDS, vol. 423, 2006, pp. 148-152.
Hütten, A., Schmalhorst, J.-M., Thomas, A., Kaemmerer, S., Sacher, M., Ebke, D., Liu, N.-N., Kou, X., Reiss, G.: Spin-electronic devices with half-metallic Heusler alloys. JOURNAL OF ALLOYS AND COMPOUNDS. 423, 148-152 (2006).
Hütten, Andreas, Schmalhorst, Jan-Michael, Thomas, Andy, Kaemmerer, S., Sacher, Marc, Ebke, Daniel, Liu, N. -N., Kou, X., and Reiss, Günter. “Spin-electronic devices with half-metallic Heusler alloys”. JOURNAL OF ALLOYS AND COMPOUNDS 423.1-2 (2006): 148-152.