Electric breakdown in ultrathin MgO tunnel barrier junctions for spin-transfer torque switching
Schäfers M, Drewello V, Reiss G, Thomas A, Thiel K, Eilers G, Muenzenberg M, Schuhmann H, Seibt M (2009)
APPLIED PHYSICS LETTERS 95(23): 232119.
Zeitschriftenaufsatz
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Autor*in
Schäfers, MarkusUniBi;
Drewello, VolkerUniBi;
Reiss, GünterUniBi 
;
Thomas, AndyUniBi ;
Thiel, K.;
Eilers, G.;
Muenzenberg, M.;
Schuhmann, H.;
Seibt, M.
;
Thomas, AndyUniBi ;
Thiel, K.;
Eilers, G.;
Muenzenberg, M.;
Schuhmann, H.;
Seibt, M.Einrichtung
Abstract / Bemerkung
Magnetic tunnel junctions for spin-transfer torque (STT) switching are prepared to investigate the dielectric breakdown. Intact and broken tunnel junctions are characterized by transport measurements prior to transmission electron microscopy analysis. The comparison to our previous model for thicker MgO tunnel barriers reveals a different breakdown mechanism arising from the high current densities in a STT device: instead of local pinhole formation at a constant rate, massive electromigration and heating leads to displacement of the junction material and voids are appearing. This is determined by element resolved energy dispersive x-ray spectroscopy and three dimensional tomographic reconstruction. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3272268]
Erscheinungsjahr
2009
Zeitschriftentitel
APPLIED PHYSICS LETTERS
Band
95
Ausgabe
23
Seite(n)
232119
ISSN
0003-6951
Page URI
https://pub.uni-bielefeld.de/record/1589327
Zitieren
Schäfers M, Drewello V, Reiss G, et al. Electric breakdown in ultrathin MgO tunnel barrier junctions for spin-transfer torque switching. APPLIED PHYSICS LETTERS. 2009;95(23):232119.
Schäfers, M., Drewello, V., Reiss, G., Thomas, A., Thiel, K., Eilers, G., Muenzenberg, M., et al. (2009). Electric breakdown in ultrathin MgO tunnel barrier junctions for spin-transfer torque switching. APPLIED PHYSICS LETTERS, 95(23), 232119. https://doi.org/10.1063/1.3272268
Schäfers, Markus, Drewello, Volker, Reiss, Günter, Thomas, Andy, Thiel, K., Eilers, G., Muenzenberg, M., Schuhmann, H., and Seibt, M. 2009. “Electric breakdown in ultrathin MgO tunnel barrier junctions for spin-transfer torque switching”. APPLIED PHYSICS LETTERS 95 (23): 232119.
Schäfers, M., Drewello, V., Reiss, G., Thomas, A., Thiel, K., Eilers, G., Muenzenberg, M., Schuhmann, H., and Seibt, M. (2009). Electric breakdown in ultrathin MgO tunnel barrier junctions for spin-transfer torque switching. APPLIED PHYSICS LETTERS 95, 232119.
Schäfers, M., et al., 2009. Electric breakdown in ultrathin MgO tunnel barrier junctions for spin-transfer torque switching. APPLIED PHYSICS LETTERS, 95(23), p 232119.
M. Schäfers, et al., “Electric breakdown in ultrathin MgO tunnel barrier junctions for spin-transfer torque switching”, APPLIED PHYSICS LETTERS, vol. 95, 2009, pp. 232119.
Schäfers, M., Drewello, V., Reiss, G., Thomas, A., Thiel, K., Eilers, G., Muenzenberg, M., Schuhmann, H., Seibt, M.: Electric breakdown in ultrathin MgO tunnel barrier junctions for spin-transfer torque switching. APPLIED PHYSICS LETTERS. 95, 232119 (2009).
Schäfers, Markus, Drewello, Volker, Reiss, Günter, Thomas, Andy, Thiel, K., Eilers, G., Muenzenberg, M., Schuhmann, H., and Seibt, M. “Electric breakdown in ultrathin MgO tunnel barrier junctions for spin-transfer torque switching”. APPLIED PHYSICS LETTERS 95.23 (2009): 232119.
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