Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers
Krzysteczko P, Kou X, Rott K, Thomas A, Reiss G (2009)
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 321(3): 144-147.
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| Veröffentlicht | Englisch
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Abstract / Bemerkung
Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110% and an area resistance product of down to 4.4 Omega mu m(2). If a large current is applied, a reversible resistance change is observed, which can be attributed to two different processes during stressing and one relaxation process afterwards. Here, we analyze the time dependence of the resistance and use a simple model to explain the observed behavior. The explanation is further supported by numerical fits to the data in order to quantify the timescales of the involved phenomena. (C) 2008 Elsevier B.V. All rights reserved.
Stichworte
Tunneling;
Memristive behavior;
Electromigration;
Current induced switching;
Diffusion
Erscheinungsjahr
2009
Zeitschriftentitel
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Band
321
Ausgabe
3
Seite(n)
144-147
ISSN
0304-8853
Page URI
https://pub.uni-bielefeld.de/record/1585467
Zitieren
Krzysteczko P, Kou X, Rott K, Thomas A, Reiss G. Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS. 2009;321(3):144-147.
Krzysteczko, P., Kou, X., Rott, K., Thomas, A., & Reiss, G. (2009). Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 321(3), 144-147. https://doi.org/10.1016/j.jmmm.2008.08.088
Krzysteczko, Patryk, Kou, Xinli, Rott, Karsten, Thomas, Andy, and Reiss, Günter. 2009. “Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers”. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 321 (3): 144-147.
Krzysteczko, P., Kou, X., Rott, K., Thomas, A., and Reiss, G. (2009). Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 321, 144-147.
Krzysteczko, P., et al., 2009. Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 321(3), p 144-147.
P. Krzysteczko, et al., “Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers”, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, vol. 321, 2009, pp. 144-147.
Krzysteczko, P., Kou, X., Rott, K., Thomas, A., Reiss, G.: Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS. 321, 144-147 (2009).
Krzysteczko, Patryk, Kou, Xinli, Rott, Karsten, Thomas, Andy, and Reiss, Günter. “Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers”. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 321.3 (2009): 144-147.
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