Integration of antiferromagnetic Heusler compound Ru2MnGe into spintronic devices

Balluff J, Huminiuc T, Meinert M, Hirohata A, Reiss G (2017)
APPLIED PHYSICS LETTERS 111(3): 032406.

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Zeitschriftenaufsatz | Veröffentlicht | Englisch
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Abstract / Bemerkung
We report on the integration of an antiferromagnetic Heusler compound acting as a pinning layer into magnetic tunneling junctions (MTJs). The antiferromagnet Ru2MnGe is used to pin the magnetization direction of a ferromagnetic Fe layer in MgO based thin film tunneling magnetoresistance stacks. The samples were prepared using magnetron co-sputtering. We investigate the structural properties by X-ray diffraction and reflection, as well as atomic force and high-resolution transmission electron microscopy. We find an excellent crystal growth quality with a low interface roughnesses of 1-3 angstrom, which is crucial for the preparation of working tunneling barriers. Using Fe as a ferromagnetic electrode material, we prepared magnetic tunneling junctions and measured the magnetoresistance. We find a sizeable maximum magnetoresistance value of 135%, which is comparable to other common Fe based MTJ systems. Published by AIP Publishing.
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APPLIED PHYSICS LETTERS
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111
Zeitschriftennummer
3
Artikelnummer
032406
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Balluff J, Huminiuc T, Meinert M, Hirohata A, Reiss G. Integration of antiferromagnetic Heusler compound Ru2MnGe into spintronic devices. APPLIED PHYSICS LETTERS. 2017;111(3): 032406.
Balluff, J., Huminiuc, T., Meinert, M., Hirohata, A., & Reiss, G. (2017). Integration of antiferromagnetic Heusler compound Ru2MnGe into spintronic devices. APPLIED PHYSICS LETTERS, 111(3), 032406. doi:10.1063/1.4985179
Balluff, J., Huminiuc, T., Meinert, M., Hirohata, A., and Reiss, G. (2017). Integration of antiferromagnetic Heusler compound Ru2MnGe into spintronic devices. APPLIED PHYSICS LETTERS 111:032406.
Balluff, J., et al., 2017. Integration of antiferromagnetic Heusler compound Ru2MnGe into spintronic devices. APPLIED PHYSICS LETTERS, 111(3): 032406.
J. Balluff, et al., “Integration of antiferromagnetic Heusler compound Ru2MnGe into spintronic devices”, APPLIED PHYSICS LETTERS, vol. 111, 2017, : 032406.
Balluff, J., Huminiuc, T., Meinert, M., Hirohata, A., Reiss, G.: Integration of antiferromagnetic Heusler compound Ru2MnGe into spintronic devices. APPLIED PHYSICS LETTERS. 111, : 032406 (2017).
Balluff, Jan, Huminiuc, Teodor, Meinert, Markus, Hirohata, Atsufumi, and Reiss, Günter. “Integration of antiferromagnetic Heusler compound Ru2MnGe into spintronic devices”. APPLIED PHYSICS LETTERS 111.3 (2017): 032406.