Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions

Teichert N, Böhnke A, Behler A, Weise B, Waske A, Hütten A (2015)
Applied Physics Letters 106(19).

Download
No fulltext has been uploaded. References only!
Journal Article | Published | English

No fulltext has been uploaded

Author
; ; ; ; ;
Abstract
The exchange bias effect is commonly used to shift the coercive field of a ferromagnet. This technique is crucial for the use of magnetic tunnel junctions as logic or memory devices. Therefore, an independent switching of the two ferromagnetic electrodes is necessary to guarantee a reliable readout. Here, we demonstrate that the intrinsic exchange bias effect of Ni-Mn-Sn can be used to apply a unidirectional anisotropy to magnetic tunnel junctions. For this, we use epitaxial Ni-Mn-Sn films as pinning layers for microfabricated CoFeB/MgO/CoFeB magnetic tunnel junctions. We compare the exchange bias field (H-EB) measured after field cooling in -10 kOe external field by magnetization measurements with H-EB obtained from tunnel magnetoresistance measurements. Consistent for both methods, we find an exchange bias of about H-EB = 130 Oe at 10 K, which decreases with increasing temperature and vanishes above 70 K. (C) 2015 AIP Publishing LLC.
Publishing Year
ISSN
PUB-ID

Cite this

Teichert N, Böhnke A, Behler A, Weise B, Waske A, Hütten A. Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions. Applied Physics Letters. 2015;106(19).
Teichert, N., Böhnke, A., Behler, A., Weise, B., Waske, A., & Hütten, A. (2015). Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions. Applied Physics Letters, 106(19). doi:10.1063/1.4921080
Teichert, N., Böhnke, A., Behler, A., Weise, B., Waske, A., and Hütten, A. (2015). Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions. Applied Physics Letters 106.
Teichert, N., et al., 2015. Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions. Applied Physics Letters, 106(19).
N. Teichert, et al., “Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions”, Applied Physics Letters, vol. 106, 2015.
Teichert, N., Böhnke, A., Behler, A., Weise, B., Waske, A., Hütten, A.: Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions. Applied Physics Letters. 106, (2015).
Teichert, Niklas, Böhnke, Alexander, Behler, A., Weise, B., Waske, A., and Hütten, Andreas. “Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions”. Applied Physics Letters 106.19 (2015).
This data publication is cited in the following publications:
This publication cites the following data publications:

Export

0 Marked Publications

Open Data PUB

Web of Science

View record in Web of Science®

Search this title in

Google Scholar