Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions

Teichert N, Böhnke A, Behler A, Weise B, Waske A, Hütten A (2015)
Applied Physics Letters 106(19): 192401.

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Zeitschriftenaufsatz | Veröffentlicht | Englisch
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Abstract / Bemerkung
The exchange bias effect is commonly used to shift the coercive field of a ferromagnet. This technique is crucial for the use of magnetic tunnel junctions as logic or memory devices. Therefore, an independent switching of the two ferromagnetic electrodes is necessary to guarantee a reliable readout. Here, we demonstrate that the intrinsic exchange bias effect of Ni-Mn-Sn can be used to apply a unidirectional anisotropy to magnetic tunnel junctions. For this, we use epitaxial Ni-Mn-Sn films as pinning layers for microfabricated CoFeB/MgO/CoFeB magnetic tunnel junctions. We compare the exchange bias field (H-EB) measured after field cooling in -10 kOe external field by magnetization measurements with H-EB obtained from tunnel magnetoresistance measurements. Consistent for both methods, we find an exchange bias of about H-EB = 130 Oe at 10 K, which decreases with increasing temperature and vanishes above 70 K. (C) 2015 AIP Publishing LLC.
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Zeitschriftentitel
Applied Physics Letters
Band
106
Zeitschriftennummer
19
Artikelnummer
192401
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Teichert N, Böhnke A, Behler A, Weise B, Waske A, Hütten A. Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions. Applied Physics Letters. 2015;106(19): 192401.
Teichert, N., Böhnke, A., Behler, A., Weise, B., Waske, A., & Hütten, A. (2015). Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions. Applied Physics Letters, 106(19), 192401. doi:10.1063/1.4921080
Teichert, N., Böhnke, A., Behler, A., Weise, B., Waske, A., and Hütten, A. (2015). Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions. Applied Physics Letters 106:192401.
Teichert, N., et al., 2015. Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions. Applied Physics Letters, 106(19): 192401.
N. Teichert, et al., “Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions”, Applied Physics Letters, vol. 106, 2015, : 192401.
Teichert, N., Böhnke, A., Behler, A., Weise, B., Waske, A., Hütten, A.: Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions. Applied Physics Letters. 106, : 192401 (2015).
Teichert, Niklas, Böhnke, Alexander, Behler, A., Weise, B., Waske, A., and Hütten, Andreas. “Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions”. Applied Physics Letters 106.19 (2015): 192401.