Analysis of dielectric breakdown in CoFeB/MgO/CoFeB magnetic tunnel junction

Khan AA (2015)
Microelectronics Reliability 55(6): 894-902.

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Journal Article | Original Article | Published | English

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The time-dependent dielectric breakdown has been investigated in a series of nominally identical Co-Fe-B/MgO/Co-Fe-B junctions by voltage ramp experiments. The results divulge that the breakdown voltage strongly depends on the polarity of the applied voltage, junction area, ramp speed and the annealing temperature. Magnetic tunnel junctions (MTJs) with positive bias on the top electrode show higher breakdown voltage than MTJs with negative bias. We found that there is a significant decrease in the breakdown voltage when the annealing temperature is increased above 350 degrees C. The experimental data can be described by different specific forms of breakdown probability functions which lead to different extrapolation of life time of junctions. (C) 2015 Elsevier Ltd. All rights reserved.
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Khan AA. Analysis of dielectric breakdown in CoFeB/MgO/CoFeB magnetic tunnel junction. Microelectronics Reliability. 2015;55(6):894-902.
Khan, A. A. (2015). Analysis of dielectric breakdown in CoFeB/MgO/CoFeB magnetic tunnel junction. Microelectronics Reliability, 55(6), 894-902. doi:10.1016/j.microrel.2015.02.018
Khan, A. A. (2015). Analysis of dielectric breakdown in CoFeB/MgO/CoFeB magnetic tunnel junction. Microelectronics Reliability 55, 894-902.
Khan, A.A., 2015. Analysis of dielectric breakdown in CoFeB/MgO/CoFeB magnetic tunnel junction. Microelectronics Reliability, 55(6), p 894-902.
A.A. Khan, “Analysis of dielectric breakdown in CoFeB/MgO/CoFeB magnetic tunnel junction”, Microelectronics Reliability, vol. 55, 2015, pp. 894-902.
Khan, A.A.: Analysis of dielectric breakdown in CoFeB/MgO/CoFeB magnetic tunnel junction. Microelectronics Reliability. 55, 894-902 (2015).
Khan, Ayaz Arif. “Analysis of dielectric breakdown in CoFeB/MgO/CoFeB magnetic tunnel junction”. Microelectronics Reliability 55.6 (2015): 894-902.
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