Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions

Fabretti S, Zierold R, Nielsch K, Voigt C, Ronning C, Peretzki P, Seibt M, Thomas A (2014)
Applied Physics Letters 105: 132405.

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Zeitschriftenaufsatz | Veröffentlicht | Englisch
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Applied Physics Letters
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105
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132405
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Fabretti S, Zierold R, Nielsch K, et al. Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions. Applied Physics Letters. 2014;105:132405.
Fabretti, S., Zierold, R., Nielsch, K., Voigt, C., Ronning, C., Peretzki, P., Seibt, M., et al. (2014). Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions. Applied Physics Letters, 105, 132405. doi:10.1063/1.4896994
Fabretti, S., Zierold, R., Nielsch, K., Voigt, C., Ronning, C., Peretzki, P., Seibt, M., and Thomas, A. (2014). Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions. Applied Physics Letters 105, 132405.
Fabretti, S., et al., 2014. Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions. Applied Physics Letters, 105, p 132405.
S. Fabretti, et al., “Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions”, Applied Physics Letters, vol. 105, 2014, pp. 132405.
Fabretti, S., Zierold, R., Nielsch, K., Voigt, C., Ronning, C., Peretzki, P., Seibt, M., Thomas, A.: Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions. Applied Physics Letters. 105, 132405 (2014).
Fabretti, Savio, Zierold, Robert, Nielsch, Kornelius, Voigt, Carmen, Ronning, Carsten, Peretzki, Patrick, Seibt, Michael, and Thomas, Andy. “Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions”. Applied Physics Letters 105 (2014): 132405.
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