High TMR Ratio in Co2FeSi and Fe2CoSi Based Magnetic Tunnel Junctions

Sterwerf C, Meinert M, Schmalhorst J-M, Reiss G (2013)
Ieee Transactions On Magnetics 49(7): 4386-4389.

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Zeitschriftenaufsatz | Veröffentlicht | Englisch
Abstract / Bemerkung
Magnetic tunnel junctions with Fe1+xCo2-xSi (0 <= x <= 1) electrodes and MgO barrier were prepared on MgO substrates by magnetron co-sputtering. Maximum tunnel magnetoresistance (TMR) ratios of 262% at 15 K and 159% at room temperature were observed for x = 0.75. Correlations of the annealing temperature dependent atomic ordering and TMR amplitude are discussed. The high TMR for an intermediate stoichiometry is ascribed to the adjustment of the Fermi energy within a minority spin pseudo gap.
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Zeitschriftentitel
Ieee Transactions On Magnetics
Band
49
Zeitschriftennummer
7
Seite
4386-4389
ISSN
eISSN
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Sterwerf C, Meinert M, Schmalhorst J-M, Reiss G. High TMR Ratio in Co2FeSi and Fe2CoSi Based Magnetic Tunnel Junctions. Ieee Transactions On Magnetics. 2013;49(7):4386-4389.
Sterwerf, C., Meinert, M., Schmalhorst, J. - M., & Reiss, G. (2013). High TMR Ratio in Co2FeSi and Fe2CoSi Based Magnetic Tunnel Junctions. Ieee Transactions On Magnetics, 49(7), 4386-4389. doi:10.1109/TMAG.2013.2238220
Sterwerf, C., Meinert, M., Schmalhorst, J. - M., and Reiss, G. (2013). High TMR Ratio in Co2FeSi and Fe2CoSi Based Magnetic Tunnel Junctions. Ieee Transactions On Magnetics 49, 4386-4389.
Sterwerf, C., et al., 2013. High TMR Ratio in Co2FeSi and Fe2CoSi Based Magnetic Tunnel Junctions. Ieee Transactions On Magnetics, 49(7), p 4386-4389.
C. Sterwerf, et al., “High TMR Ratio in Co2FeSi and Fe2CoSi Based Magnetic Tunnel Junctions”, Ieee Transactions On Magnetics, vol. 49, 2013, pp. 4386-4389.
Sterwerf, C., Meinert, M., Schmalhorst, J.-M., Reiss, G.: High TMR Ratio in Co2FeSi and Fe2CoSi Based Magnetic Tunnel Junctions. Ieee Transactions On Magnetics. 49, 4386-4389 (2013).
Sterwerf, Christian, Meinert, Markus, Schmalhorst, Jan-Michael, and Reiss, Günter. “High TMR Ratio in Co2FeSi and Fe2CoSi Based Magnetic Tunnel Junctions”. Ieee Transactions On Magnetics 49.7 (2013): 4386-4389.

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arXiv: 1308.2072

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