Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier

Krumme B, Ebke D, Weis C, Makarov SI, Warland A, Hütten A, Wende H (2012)
Applied Physics Letters 101(23).

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We investigated the electronic structure as well as the magnetic properties of a Co2MnSi film on MgO(100) element-specifically at the interface to a MgO tunnel barrier by means of X-ray absorption spectroscopy and X-ray magnetic circular dichroism. The electronic structure of the Co atoms as a function of the capping layer thickness remained unchanged, whereas the XA spectra of Mn indicate an increase of the unoccupied d states. The experimental findings are consistent with the interfacial structure proposed in the work by B. Hulsen et al. [Phys. Rev. Lett. 103, 046802 (2009)], where a MnSi layer is present at the interface to the MgO with oxygen atoms at top positions in the first MgO layer. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769180]
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Krumme B, Ebke D, Weis C, et al. Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier. Applied Physics Letters. 2012;101(23).
Krumme, B., Ebke, D., Weis, C., Makarov, S. I., Warland, A., Hütten, A., & Wende, H. (2012). Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier. Applied Physics Letters, 101(23).
Krumme, B., Ebke, D., Weis, C., Makarov, S. I., Warland, A., Hütten, A., and Wende, H. (2012). Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier. Applied Physics Letters 101.
Krumme, B., et al., 2012. Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier. Applied Physics Letters, 101(23).
B. Krumme, et al., “Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier”, Applied Physics Letters, vol. 101, 2012.
Krumme, B., Ebke, D., Weis, C., Makarov, S.I., Warland, A., Hütten, A., Wende, H.: Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier. Applied Physics Letters. 101, (2012).
Krumme, B., Ebke, Daniel, Weis, C., Makarov, S. I., Warland, A., Hütten, Andreas, and Wende, H. “Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier”. Applied Physics Letters 101.23 (2012).
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