Abnormal behaviors in electrical transport properties of cobalt-doped tin oxide thin films

Jiang Y, Li Y, Yan M, Bahlawane N (2012)
Journal of Materials Chemistry 22(31): 16060-16065.

Journal Article | Published | English

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Electrical transport behaviors of SnO2-based oxides are absolutely essential, either for the understanding of physiochemical properties, or their practical applications. In this paper, an abnormal change in electrical transport is reported upon cobalt doping. A far-from-equilibrium technique-pulsed spray evaporation chemical vapor deposition (PSE-CVD), is investigated for the fabrication of Sn1-xCoxO2-delta (x = 0-0.18) thin films. Upon cobalt doping, the Hall mobility improves gradually and a ten-fold enhancement was noticed for Sn0.82Co0.18O2-delta relative to pure SnO2 films. This unexpected effect induces a dramatic drop in the electrical resistivity. Post-annealing treatment and XPS investigation indicate that the occurrence of surface-stabilized tin interstitials may be the primary reason for the unusual enhancement in conductivity. Cobalt doping not only generates the interstitial tin cations, but also stabilizes to a great extent their presence at the surface. This study may help to illumine new insight for the understanding of doping strategies, and offer a potential route for transport-related applications.
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Jiang Y, Li Y, Yan M, Bahlawane N. Abnormal behaviors in electrical transport properties of cobalt-doped tin oxide thin films. Journal of Materials Chemistry. 2012;22(31):16060-16065.
Jiang, Y., Li, Y., Yan, M., & Bahlawane, N. (2012). Abnormal behaviors in electrical transport properties of cobalt-doped tin oxide thin films. Journal of Materials Chemistry, 22(31), 16060-16065.
Jiang, Y., Li, Y., Yan, M., and Bahlawane, N. (2012). Abnormal behaviors in electrical transport properties of cobalt-doped tin oxide thin films. Journal of Materials Chemistry 22, 16060-16065.
Jiang, Y., et al., 2012. Abnormal behaviors in electrical transport properties of cobalt-doped tin oxide thin films. Journal of Materials Chemistry, 22(31), p 16060-16065.
Y. Jiang, et al., “Abnormal behaviors in electrical transport properties of cobalt-doped tin oxide thin films”, Journal of Materials Chemistry, vol. 22, 2012, pp. 16060-16065.
Jiang, Y., Li, Y., Yan, M., Bahlawane, N.: Abnormal behaviors in electrical transport properties of cobalt-doped tin oxide thin films. Journal of Materials Chemistry. 22, 16060-16065 (2012).
Jiang, Yinzhu, Li, Yong, Yan, Mi, and Bahlawane, Naoufal. “Abnormal behaviors in electrical transport properties of cobalt-doped tin oxide thin films”. Journal of Materials Chemistry 22.31 (2012): 16060-16065.
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