Plasmon enhanced resonant defect absorption in thin a-Si:H n-i-p devices

Lükermann F, Heinzmann U, Stiebig H (2012)
Appl. Phys. Lett. 100(25).

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Lükermann F, Heinzmann U, Stiebig H. Plasmon enhanced resonant defect absorption in thin a-Si:H n-i-p devices. Appl. Phys. Lett. 2012;100(25).
Lükermann, F., Heinzmann, U., & Stiebig, H. (2012). Plasmon enhanced resonant defect absorption in thin a-Si:H n-i-p devices. Appl. Phys. Lett., 100(25).
Lükermann, F., Heinzmann, U., and Stiebig, H. (2012). Plasmon enhanced resonant defect absorption in thin a-Si:H n-i-p devices. Appl. Phys. Lett. 100.
Lükermann, F., Heinzmann, U., & Stiebig, H., 2012. Plasmon enhanced resonant defect absorption in thin a-Si:H n-i-p devices. Appl. Phys. Lett., 100(25).
F. Lükermann, U. Heinzmann, and H. Stiebig, “Plasmon enhanced resonant defect absorption in thin a-Si:H n-i-p devices”, Appl. Phys. Lett., vol. 100, 2012.
Lükermann, F., Heinzmann, U., Stiebig, H.: Plasmon enhanced resonant defect absorption in thin a-Si:H n-i-p devices. Appl. Phys. Lett. 100, (2012).
Lükermann, Florian, Heinzmann, Ulrich, and Stiebig, Helmut. “Plasmon enhanced resonant defect absorption in thin a-Si:H n-i-p devices”. Appl. Phys. Lett. 100.25 (2012).
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