A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device

Münchenberger J, Reiss G, Thomas A (2012)
Journal of Applied Physics 111(7).

Journal Article | Published | English

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Münchenberger J, Reiss G, Thomas A. A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device. Journal of Applied Physics. 2012;111(7).
Münchenberger, J., Reiss, G., & Thomas, A. (2012). A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device. Journal of Applied Physics, 111(7).
Münchenberger, J., Reiss, G., and Thomas, A. (2012). A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device. Journal of Applied Physics 111.
Münchenberger, J., Reiss, G., & Thomas, A., 2012. A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device. Journal of Applied Physics, 111(7).
J. Münchenberger, G. Reiss, and A. Thomas, “A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device”, Journal of Applied Physics, vol. 111, 2012.
Münchenberger, J., Reiss, G., Thomas, A.: A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device. Journal of Applied Physics. 111, (2012).
Münchenberger, Jana, Reiss, Günter, and Thomas, Andy. “A memristor based on current-induced domain-wall motion in a nanostructured giant magnetoresistance device”. Journal of Applied Physics 111.7 (2012).
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