Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study

Skudlik H, Deicher M, Keller R, Magerle R, Pfeiffer W, Pross P, Wichert T (1992)
Nucl. Instrum. Methods B 63(1-2): 205-208.

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Zeitschriftenaufsatz | Veröffentlicht | Englisch
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Abstract / Bemerkung
PAC measurements at In-111, yielding information on the amount of formed In-H pairs. and four point resistivity measurements were combined to study the correlation between pair formation and electrical deactivation of acceptors in p-Si samples during passivation with H and thermal reactivation. Passivation was performed by means of low energy (200 eV) H+ implantation which proved to be quite efficient at 400 K. A complete passivation of the in profile with a peak concentration of 10(18) cm-3 could be achieved. The results show, that the deactivation and reactivation of the In acceptors quantitatively coincide with the formation and dissociation of In-H pairs.
Erscheinungsjahr
Zeitschriftentitel
Nucl. Instrum. Methods B
Band
63
Zeitschriftennummer
1-2
Seite
205-208
ISSN
PUB-ID

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Skudlik H, Deicher M, Keller R, et al. Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study. Nucl. Instrum. Methods B. 1992;63(1-2):205-208.
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, W., Pross, P., & Wichert, T. (1992). Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study. Nucl. Instrum. Methods B, 63(1-2), 205-208. doi:10.1016/0168-583X(92)95196-X
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, W., Pross, P., and Wichert, T. (1992). Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study. Nucl. Instrum. Methods B 63, 205-208.
Skudlik, H., et al., 1992. Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study. Nucl. Instrum. Methods B, 63(1-2), p 205-208.
H. Skudlik, et al., “Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study”, Nucl. Instrum. Methods B, vol. 63, 1992, pp. 205-208.
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, W., Pross, P., Wichert, T.: Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study. Nucl. Instrum. Methods B. 63, 205-208 (1992).
Skudlik, H., Deicher, M., Keller, R., Magerle, R., Pfeiffer, Walter, Pross, P., and Wichert, T. “Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study”. Nucl. Instrum. Methods B 63.1-2 (1992): 205-208.