Radioactive isotopes in photoluminescence experiments: Identification of defect levels

Magerle R, Burchard A, Deicher M, Kerle T, Pfeiffer W, Recknagel E (1995)
Physical Review Letters 75(8): 1594-1597.

Journal Article | Published | English

No fulltext has been uploaded

Author
; ; ; ; ;
Abstract
The characteristic lifetimes of radioactive isotopes can be used to label and identify defect levels in semiconductors which can be detected by photoluminescence (PL). This is demonstrated in GaAs doped with radioactive In-111. During its decay to Cd-111 all those PL peaks increase for which Cd accepters are involved. By deriving a quantitative relation between PL intensity and Cd concentration we show that this intensity increase is determined only by the nuclear lifetime of In-111. Thus we gain a complete and independent identification of the Cd related PL peaks in GaAs.
Publishing Year
ISSN
eISSN
PUB-ID

Cite this

Magerle R, Burchard A, Deicher M, Kerle T, Pfeiffer W, Recknagel E. Radioactive isotopes in photoluminescence experiments: Identification of defect levels. Physical Review Letters. 1995;75(8):1594-1597.
Magerle, R., Burchard, A., Deicher, M., Kerle, T., Pfeiffer, W., & Recknagel, E. (1995). Radioactive isotopes in photoluminescence experiments: Identification of defect levels. Physical Review Letters, 75(8), 1594-1597.
Magerle, R., Burchard, A., Deicher, M., Kerle, T., Pfeiffer, W., and Recknagel, E. (1995). Radioactive isotopes in photoluminescence experiments: Identification of defect levels. Physical Review Letters 75, 1594-1597.
Magerle, R., et al., 1995. Radioactive isotopes in photoluminescence experiments: Identification of defect levels. Physical Review Letters, 75(8), p 1594-1597.
R. Magerle, et al., “Radioactive isotopes in photoluminescence experiments: Identification of defect levels”, Physical Review Letters, vol. 75, 1995, pp. 1594-1597.
Magerle, R., Burchard, A., Deicher, M., Kerle, T., Pfeiffer, W., Recknagel, E.: Radioactive isotopes in photoluminescence experiments: Identification of defect levels. Physical Review Letters. 75, 1594-1597 (1995).
Magerle, R., Burchard, A., Deicher, M., Kerle, T., Pfeiffer, Walter, and Recknagel, E. “Radioactive isotopes in photoluminescence experiments: Identification of defect levels”. Physical Review Letters 75.8 (1995): 1594-1597.
This data publication is cited in the following publications:
This publication cites the following data publications:

13 References

Data provided by Europe PubMed Central.


AUTHOR UNKNOWN, 1989
Photoluminescence of AlxGa1−xAs alloys
Pavesi, Journal of Applied Physics 75(10), 1994
Identification of band-gap states by deep level transient spectroscopy on radioactive probes: The case of Au and Pt in silicon
Petersen, Applied Physics Letters 56(12), 1990
Residual acceptor impurities in undoped high-purity InP grown by metalorganic chemical vapor deposition
Bose, Applied Physics Letters 56(8), 1990
Annealing of Cd-implanted GaAs: Defect removal, lattice site occupation, and electrical activation
Moriya, Journal of Applied Physics 73(9), 1993

Pons, Journal of Physics C Solid State Physics 18(20), 1985

Canham, Journal of Physics C Solid State Physics 13(27), 1980
Arsenic antisite defect AsGa and EL2 in GaAs.
Meyer BK, Hofmann DM, Niklas JR, Spaeth J., Phys. Rev., B Condens. Matter 36(2), 1987
PMID: 9942957
Isoelectronic Trap Li-Li-O in GaP
Dean, Physical Review B 4(8), 1971
Self-Compensation Limited Conductivity in Binary Semiconductors. I. Theory
Mandel, Physical Review 134(4a), 1964
Donors and acceptors in tellurium compounds; The problem of doping and self-compensation
Pautrat, Journal of Crystal Growth 72(1-2), 1985
Deep level transient spectroscopy on radioactive impurities: Demonstration for Si:111In*
Lang, Applied Physics A Solids and Surfaces 53(2), 1991

Export

0 Marked Publications

Open Data PUB

Web of Science

View record in Web of Science®

Sources

PMID: 10060337
PubMed | Europe PMC

Search this title in

Google Scholar