Nanometer-scale lithography in thin carbon layers using electric field assisted scanning force microscopy

Mühl T, Brückl H, Weise G, Reiss G (1997)
Journal of Applied Physics 82(10): 5255-5258.

Download
Es wurde kein Volltext hochgeladen. Nur Publikationsnachweis!
Zeitschriftenaufsatz | Veröffentlicht | Englisch
Autor
; ; ;
Abstract / Bemerkung
Resist patterning by scanning probe microscopy is a promising method to create structures in the nanometer range beyond the resolution of conventional electron beam or photo lithography. In conventional resist processing one has to remove either the exposed or unexposed resist in a solvent by an additional step. In this article we demonstrate the possibility of directly writing nano-scaled patterns in a thin amorphous carbon layer, which can be used as an etching mask, by a scanning force microscope. Above a threshold voltage between tip and sample small trenches can be created, whereby the carbon is completely removed from the exposed areas. Evidence is given that the mechanism responsible for the trench formation is a local field-induced oxidation of the carbon layer underneath the tip. (C) 1997 American Institute of Physics.
Erscheinungsjahr
Zeitschriftentitel
Journal of Applied Physics
Band
82
Zeitschriftennummer
10
Seite
5255-5258
ISSN
PUB-ID

Zitieren

Mühl T, Brückl H, Weise G, Reiss G. Nanometer-scale lithography in thin carbon layers using electric field assisted scanning force microscopy. Journal of Applied Physics. 1997;82(10):5255-5258.
Mühl, T., Brückl, H., Weise, G., & Reiss, G. (1997). Nanometer-scale lithography in thin carbon layers using electric field assisted scanning force microscopy. Journal of Applied Physics, 82(10), 5255-5258. doi:10.1063/1.366392
Mühl, T., Brückl, H., Weise, G., and Reiss, G. (1997). Nanometer-scale lithography in thin carbon layers using electric field assisted scanning force microscopy. Journal of Applied Physics 82, 5255-5258.
Mühl, T., et al., 1997. Nanometer-scale lithography in thin carbon layers using electric field assisted scanning force microscopy. Journal of Applied Physics, 82(10), p 5255-5258.
T. Mühl, et al., “Nanometer-scale lithography in thin carbon layers using electric field assisted scanning force microscopy”, Journal of Applied Physics, vol. 82, 1997, pp. 5255-5258.
Mühl, T., Brückl, H., Weise, G., Reiss, G.: Nanometer-scale lithography in thin carbon layers using electric field assisted scanning force microscopy. Journal of Applied Physics. 82, 5255-5258 (1997).
Mühl, T, Brückl, H, Weise, G, and Reiss, Günter. “Nanometer-scale lithography in thin carbon layers using electric field assisted scanning force microscopy”. Journal of Applied Physics 82.10 (1997): 5255-5258.