Charged and neutral defect states in a-Si:H determined from improved analysis of the constant photocurrent method

Siebke F, Stiebig H, Abo-Arais A, Wagner H (1996)
Solar Energy Materials and Solar Cells 41-42: 529-536.

Journal Article | Published | English

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Abstract
In order to obtain information about the density of localized gap states in a-Si:H, i.e., the valence band tail, the integrated defect density, the energetic defect distribution and the charge state of the defect states, a numerical model has been developed to simulate constant photocurrent method spectra. It takes into account the full set of optical transitions between localized and extended states under sub-bandgap illumination, capture, emission and recombination processes as well as the energetic position of the Fermi level. We compare measured and simulated CPM spectra of doped and undoped a-Si:H. In the annealed state the defect absorption of n- and p-type as well as undoped a-Si:H is dominated by a charged defect states. The simulation reveals that in undoped a-Si:H light soaking, causing an enhanced defect density, does not alter the charged-to-neutral defect ratio.
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Siebke F, Stiebig H, Abo-Arais A, Wagner H. Charged and neutral defect states in a-Si:H determined from improved analysis of the constant photocurrent method. Solar Energy Materials and Solar Cells. 1996;41-42:529-536.
Siebke, F., Stiebig, H., Abo-Arais, A., & Wagner, H. (1996). Charged and neutral defect states in a-Si:H determined from improved analysis of the constant photocurrent method. Solar Energy Materials and Solar Cells, 41-42, 529-536.
Siebke, F., Stiebig, H., Abo-Arais, A., and Wagner, H. (1996). Charged and neutral defect states in a-Si:H determined from improved analysis of the constant photocurrent method. Solar Energy Materials and Solar Cells 41-42, 529-536.
Siebke, F., et al., 1996. Charged and neutral defect states in a-Si:H determined from improved analysis of the constant photocurrent method. Solar Energy Materials and Solar Cells, 41-42, p 529-536.
F. Siebke, et al., “Charged and neutral defect states in a-Si:H determined from improved analysis of the constant photocurrent method”, Solar Energy Materials and Solar Cells, vol. 41-42, 1996, pp. 529-536.
Siebke, F., Stiebig, H., Abo-Arais, A., Wagner, H.: Charged and neutral defect states in a-Si:H determined from improved analysis of the constant photocurrent method. Solar Energy Materials and Solar Cells. 41-42, 529-536 (1996).
Siebke, F., Stiebig, Helmut, Abo-Arais, A., and Wagner, H. “Charged and neutral defect states in a-Si:H determined from improved analysis of the constant photocurrent method”. Solar Energy Materials and Solar Cells 41-42 (1996): 529-536.
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