Adjustable ultraviolet-sensitive detectors based on amorphous silicon

Topic M, Stiebig H, Krause M, Wagner H (2001)
Applied Physics Letters 78(16): 2387-2389.

Journal Article | Published | English

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Thin-film detectors made of hydrogenated amorphous silicon (LI-Si:H) and amorphous silicon carbide (a-SiC:H) with adjustable sensitivity in the ultraviolet (UV) spectrum were developed. Thin PIN diodes deposited on glass substrates in N-I-P layer sequence with a total thickness of down to 33 nm and a semitransparent Ag front contact were fabricated. The optimized diodes with a 10 nm Ag contact exhibit spectral response values above 80 mA/W in the wavelength range from 295 to 395 nm with a maximum of 91 mA/W at 320 nm, For longer wavelengths, the spectral response drops by 50% at 450 nm. Increasing the thickness of the Ag front contact leads to a narrowing of the spectral response at around 320 nm, which allows the adjustment from a broad UV to a selective UV-B-sensitive detector. (C) 2001 American Institute of Physics.
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Topic M, Stiebig H, Krause M, Wagner H. Adjustable ultraviolet-sensitive detectors based on amorphous silicon. Applied Physics Letters. 2001;78(16):2387-2389.
Topic, M., Stiebig, H., Krause, M., & Wagner, H. (2001). Adjustable ultraviolet-sensitive detectors based on amorphous silicon. Applied Physics Letters, 78(16), 2387-2389.
Topic, M., Stiebig, H., Krause, M., and Wagner, H. (2001). Adjustable ultraviolet-sensitive detectors based on amorphous silicon. Applied Physics Letters 78, 2387-2389.
Topic, M., et al., 2001. Adjustable ultraviolet-sensitive detectors based on amorphous silicon. Applied Physics Letters, 78(16), p 2387-2389.
M. Topic, et al., “Adjustable ultraviolet-sensitive detectors based on amorphous silicon”, Applied Physics Letters, vol. 78, 2001, pp. 2387-2389.
Topic, M., Stiebig, H., Krause, M., Wagner, H.: Adjustable ultraviolet-sensitive detectors based on amorphous silicon. Applied Physics Letters. 78, 2387-2389 (2001).
Topic, M., Stiebig, Helmut, Krause, M., and Wagner, H. “Adjustable ultraviolet-sensitive detectors based on amorphous silicon”. Applied Physics Letters 78.16 (2001): 2387-2389.
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