Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers

Mai Y, Klein S, Carius R, Stiebig H, Geng X, Finger F (2005)
Applied Physics Letters 87(7).

Journal Article | Published | English

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Abstract
Significant improvement in open circuit voltage and fill factor was achieved for microcrystalline silicon (mu c-Si:H) solar cells deposited by plasma-enhanced chemical vapor deposition (PECVD) by the incorporation of an intrinsic mu c-Si:H p/i buffer layer fabricated by hot-wire (HW) CVD. The improved p/i interface quality, likely due to the ion-free deposition on the p layers in the HWCVD process, was concluded from a considerably enhanced blue light response in such solar cells. Using this buffer layer concept allows the authors to apply high deposition rate PECVD processes for the mu c-Si:H i layer material, yielding a high efficiency of 10.3% for a single junction mu c-Si:H solar cell. (C) 2005 American Institute of Physics.
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Mai Y, Klein S, Carius R, Stiebig H, Geng X, Finger F. Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers. Applied Physics Letters. 2005;87(7).
Mai, Y., Klein, S., Carius, R., Stiebig, H., Geng, X., & Finger, F. (2005). Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers. Applied Physics Letters, 87(7).
Mai, Y., Klein, S., Carius, R., Stiebig, H., Geng, X., and Finger, F. (2005). Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers. Applied Physics Letters 87.
Mai, Y., et al., 2005. Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers. Applied Physics Letters, 87(7).
Y. Mai, et al., “Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers”, Applied Physics Letters, vol. 87, 2005.
Mai, Y., Klein, S., Carius, R., Stiebig, H., Geng, X., Finger, F.: Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers. Applied Physics Letters. 87, (2005).
Mai, Y, Klein, S, Carius, R, Stiebig, Helmut, Geng, X, and Finger, F. “Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers”. Applied Physics Letters 87.7 (2005).
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