Determination of the mobility gap of intrinsic mu c-Si:H in p-i-n solar cells

Pieters BE, Stiebig H, Zeman M, van Swaaij RACMM (2009)
Journal of Applied Physics 105(4): 044502.

Download
Es wurde kein Volltext hochgeladen. Nur Publikationsnachweis!
Zeitschriftenaufsatz | Veröffentlicht | Englisch
Autor
; ; ;
Abstract / Bemerkung
Microcrystalline silicon (mu c-Si:H) is a promising material for application in multijunction thin-film solar cells. A detailed analysis of the optoelectronic properties is impeded by its complex microstructural properties. In this work we will focus on determining the mobility gap of mu c-Si:H material. Commonly a value of 1.1 eV is found, similar to the bandgap of crystalline silicon. However, in other studies mobility gap values have been reported to be in the range of 1.48-1.59 eV, depending on crystalline volume fraction. Indeed, for the accurate modeling of mu c-Si:H solar cells, it is paramount that key parameters such as the mobility gap are accurately determined. A method is presented to determine the mobility gap of the intrinsic layer in a p-i-n device from the voltage-dependent dark current activation energy. We thus determined a value of 1.19 eV for the mobility gap of the intrinsic layer of an mu c-Si:H p-i-n device. We analyze the obtained results in detail through numerical simulations of the mu c-Si:H p-i-n device. The applicability of the method for other than the investigated devices is discussed with the aid of numerical simulations.
Erscheinungsjahr
Zeitschriftentitel
Journal of Applied Physics
Band
105
Zeitschriftennummer
4
Seite
044502
ISSN
PUB-ID

Zitieren

Pieters BE, Stiebig H, Zeman M, van Swaaij RACMM. Determination of the mobility gap of intrinsic mu c-Si:H in p-i-n solar cells. Journal of Applied Physics. 2009;105(4):044502.
Pieters, B. E., Stiebig, H., Zeman, M., & van Swaaij, R. A. C. M. M. (2009). Determination of the mobility gap of intrinsic mu c-Si:H in p-i-n solar cells. Journal of Applied Physics, 105(4), 044502. doi:10.1063/1.3078044
Pieters, B. E., Stiebig, H., Zeman, M., and van Swaaij, R. A. C. M. M. (2009). Determination of the mobility gap of intrinsic mu c-Si:H in p-i-n solar cells. Journal of Applied Physics 105, 044502.
Pieters, B.E., et al., 2009. Determination of the mobility gap of intrinsic mu c-Si:H in p-i-n solar cells. Journal of Applied Physics, 105(4), p 044502.
B.E. Pieters, et al., “Determination of the mobility gap of intrinsic mu c-Si:H in p-i-n solar cells”, Journal of Applied Physics, vol. 105, 2009, pp. 044502.
Pieters, B.E., Stiebig, H., Zeman, M., van Swaaij, R.A.C.M.M.: Determination of the mobility gap of intrinsic mu c-Si:H in p-i-n solar cells. Journal of Applied Physics. 105, 044502 (2009).
Pieters, B. E., Stiebig, Helmut, Zeman, M., and van Swaaij, R. A. C. M. M. “Determination of the mobility gap of intrinsic mu c-Si:H in p-i-n solar cells”. Journal of Applied Physics 105.4 (2009): 044502.