Modelling of contact effects in microcrystalline silicon thin-film transistors

Chan K-Y, Hashem E, Gordijn A, Stiebig H, Knipp D (2009)
Applied Physics A 96(3): 751-758.

Download
Es wurde kein Volltext hochgeladen. Nur Publikationsnachweis!
Zeitschriftenaufsatz | Veröffentlicht | Englisch
Autor
; ; ; ;
Abstract / Bemerkung
Hydrogenated microcrystalline silicon has recently emerged as a promising material system for large-area electronic applications such as thin-film transistors and solar cells. In this paper, thin-film transistors based on microcrystalline silicon were realized with charge carrier mobilities exceeding 40 cm(2)/Vs. The electrical characteristics of the microcrystalline silicon thin-film transistors are limited by the influence of contact effects. The influence of the contact effects on the charge carrier mobility was investigated for transistors with different dimensions of the drain and source contacts. The experimental results were compared to an electrical model which describes the influence of the drain and source contact dimension on the transistor parameters. Furthermore, the Transmission Line Method was applied to investigate the contact effects of the thin-film transistors with different drain and source contact dimensions. Finally, optimized device geometries like the channel length of the transistor and dimension of the drain and source contacts were derived for the microcrystalline transistors based on the electrical model.
Erscheinungsjahr
Zeitschriftentitel
Applied Physics A
Band
96
Zeitschriftennummer
3
Seite
751-758
ISSN
eISSN
PUB-ID

Zitieren

Chan K-Y, Hashem E, Gordijn A, Stiebig H, Knipp D. Modelling of contact effects in microcrystalline silicon thin-film transistors. Applied Physics A. 2009;96(3):751-758.
Chan, K. - Y., Hashem, E., Gordijn, A., Stiebig, H., & Knipp, D. (2009). Modelling of contact effects in microcrystalline silicon thin-film transistors. Applied Physics A, 96(3), 751-758. doi:10.1007/s00339-009-5287-y
Chan, K. - Y., Hashem, E., Gordijn, A., Stiebig, H., and Knipp, D. (2009). Modelling of contact effects in microcrystalline silicon thin-film transistors. Applied Physics A 96, 751-758.
Chan, K.-Y., et al., 2009. Modelling of contact effects in microcrystalline silicon thin-film transistors. Applied Physics A, 96(3), p 751-758.
K.-Y. Chan, et al., “Modelling of contact effects in microcrystalline silicon thin-film transistors”, Applied Physics A, vol. 96, 2009, pp. 751-758.
Chan, K.-Y., Hashem, E., Gordijn, A., Stiebig, H., Knipp, D.: Modelling of contact effects in microcrystalline silicon thin-film transistors. Applied Physics A. 96, 751-758 (2009).
Chan, Kah-Yoong, Hashem, Elias, Gordijn, Aad, Stiebig, Helmut, and Knipp, Dietmar. “Modelling of contact effects in microcrystalline silicon thin-film transistors”. Applied Physics A 96.3 (2009): 751-758.