Microcrystalline-Silicon Transistors and CMOS Inverters Fabricated Near the Transition to Amorphous-Growth Regime

Chan K-Y, Gordijn A, Stiebig H, Knipp D (2009)
IEEE Transactions on Electron Devices 56(9): 1924-1929.

Journal Article | Published | English

No fulltext has been uploaded

Author
; ; ;
Abstract
Thin-film transistors (TFTs) are core elements of novel display media for large-area electronic applications. Microcrystalline-silicon TFTs prepared at low temperatures (150 degrees C-200 degrees C) have recently gained much attention as potential elements for such applications due to their high charge carrier mobilities exceeding 10 cm(2)/V . s. Understanding the relationship between structural properties and charge transport is the key in realizing transistors with high charge carrier mobility at low temperatures. In this paper, we investigated the correlation between the structural properties of microcrystalline silicon and the performance of high-mobility microcrystalline-silicon TFTs. Transistors with high electron and hole charge carrier mobilities exceeding 50 and 12 cm(2)/V . s, respectively, were realized near the transition to the amorphous-growth regime. The results reveal that electronic defects at the grain boundaries of silicon crystallites are passivated by the amorphous phase. The results contradict the commonly believed assumption that the highest charge charier mobility can only be achieved for films with high or very high crystalline-silicon volume fraction. The crystalline volume fraction of the material will be correlated to the device parameters of transistors. Furthermore, the first results of microcrystalline-silicon-TFT-based complementary-metal-oxide-semiconductor inverters with high voltage gains exceeding 22 will be presented.
Publishing Year
ISSN
PUB-ID

Cite this

Chan K-Y, Gordijn A, Stiebig H, Knipp D. Microcrystalline-Silicon Transistors and CMOS Inverters Fabricated Near the Transition to Amorphous-Growth Regime. IEEE Transactions on Electron Devices. 2009;56(9):1924-1929.
Chan, K. - Y., Gordijn, A., Stiebig, H., & Knipp, D. (2009). Microcrystalline-Silicon Transistors and CMOS Inverters Fabricated Near the Transition to Amorphous-Growth Regime. IEEE Transactions on Electron Devices, 56(9), 1924-1929.
Chan, K. - Y., Gordijn, A., Stiebig, H., and Knipp, D. (2009). Microcrystalline-Silicon Transistors and CMOS Inverters Fabricated Near the Transition to Amorphous-Growth Regime. IEEE Transactions on Electron Devices 56, 1924-1929.
Chan, K.-Y., et al., 2009. Microcrystalline-Silicon Transistors and CMOS Inverters Fabricated Near the Transition to Amorphous-Growth Regime. IEEE Transactions on Electron Devices, 56(9), p 1924-1929.
K.-Y. Chan, et al., “Microcrystalline-Silicon Transistors and CMOS Inverters Fabricated Near the Transition to Amorphous-Growth Regime”, IEEE Transactions on Electron Devices, vol. 56, 2009, pp. 1924-1929.
Chan, K.-Y., Gordijn, A., Stiebig, H., Knipp, D.: Microcrystalline-Silicon Transistors and CMOS Inverters Fabricated Near the Transition to Amorphous-Growth Regime. IEEE Transactions on Electron Devices. 56, 1924-1929 (2009).
Chan, Kah-Yoong, Gordijn, Aad, Stiebig, Helmut, and Knipp, Dietmar. “Microcrystalline-Silicon Transistors and CMOS Inverters Fabricated Near the Transition to Amorphous-Growth Regime”. IEEE Transactions on Electron Devices 56.9 (2009): 1924-1929.
This data publication is cited in the following publications:
This publication cites the following data publications:

Export

0 Marked Publications

Open Data PUB

Web of Science

View record in Web of Science®

Search this title in

Google Scholar