High mobility microcrystalline silicon Thin-Film Transistors fabricated at temperatures below 200°C

Chan KY, Bunte E, Stiebig H, Knipp D (2008)
Chinese Journal of Electron Devices 31(1): 109-114.

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Zeitschriftenaufsatz | Veröffentlicht | Englisch
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Erscheinungsjahr
Zeitschriftentitel
Chinese Journal of Electron Devices
Band
31
Zeitschriftennummer
1
Seite
109-114
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Chan KY, Bunte E, Stiebig H, Knipp D. High mobility microcrystalline silicon Thin-Film Transistors fabricated at temperatures below 200°C. Chinese Journal of Electron Devices. 2008;31(1):109-114.
Chan, K. Y., Bunte, E., Stiebig, H., & Knipp, D. (2008). High mobility microcrystalline silicon Thin-Film Transistors fabricated at temperatures below 200°C. Chinese Journal of Electron Devices, 31(1), 109-114.
Chan, K. Y., Bunte, E., Stiebig, H., and Knipp, D. (2008). High mobility microcrystalline silicon Thin-Film Transistors fabricated at temperatures below 200°C. Chinese Journal of Electron Devices 31, 109-114.
Chan, K.Y., et al., 2008. High mobility microcrystalline silicon Thin-Film Transistors fabricated at temperatures below 200°C. Chinese Journal of Electron Devices, 31(1), p 109-114.
K.Y. Chan, et al., “High mobility microcrystalline silicon Thin-Film Transistors fabricated at temperatures below 200°C”, Chinese Journal of Electron Devices, vol. 31, 2008, pp. 109-114.
Chan, K.Y., Bunte, E., Stiebig, H., Knipp, D.: High mobility microcrystalline silicon Thin-Film Transistors fabricated at temperatures below 200°C. Chinese Journal of Electron Devices. 31, 109-114 (2008).
Chan, K.Y., Bunte, E., Stiebig, Helmut, and Knipp, D. “High mobility microcrystalline silicon Thin-Film Transistors fabricated at temperatures below 200°C”. Chinese Journal of Electron Devices 31.1 (2008): 109-114.

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