Optimization Criteria for a-Si:H NIPIN Color Sensors

Stiebig H, Böhm M (1993)
Journal of Non-Cryst. Solids 164-166: 785-788.

Journal Article | Published | English

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Abstract
Amorphous silicon based n-i-p-i-n structures map be used as color detectors. A comparison of numerical modelling and measurements of spectral I-V and monochromatic response curves provides information about general device properties and device optimization criteria. The results of the simulations point out that the electronic properties in the vicinity of the p layer and the defect density in the p layer have a major influence on device perfomance and spectral separation.
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Stiebig H, Böhm M. Optimization Criteria for a-Si:H NIPIN Color Sensors. Journal of Non-Cryst. Solids. 1993;164-166:785-788.
Stiebig, H., & Böhm, M. (1993). Optimization Criteria for a-Si:H NIPIN Color Sensors. Journal of Non-Cryst. Solids, 164-166, 785-788.
Stiebig, H., and Böhm, M. (1993). Optimization Criteria for a-Si:H NIPIN Color Sensors. Journal of Non-Cryst. Solids 164-166, 785-788.
Stiebig, H., & Böhm, M., 1993. Optimization Criteria for a-Si:H NIPIN Color Sensors. Journal of Non-Cryst. Solids, 164-166, p 785-788.
H. Stiebig and M. Böhm, “Optimization Criteria for a-Si:H NIPIN Color Sensors”, Journal of Non-Cryst. Solids, vol. 164-166, 1993, pp. 785-788.
Stiebig, H., Böhm, M.: Optimization Criteria for a-Si:H NIPIN Color Sensors. Journal of Non-Cryst. Solids. 164-166, 785-788 (1993).
Stiebig, Helmut, and Böhm, M. “Optimization Criteria for a-Si:H NIPIN Color Sensors”. Journal of Non-Cryst. Solids 164-166 (1993): 785-788.
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