Copper in silicon

Keller R, Deicher M, Pfeiffer W, Skudlik H, Steiner D, Wichert T (1990)
Phys. Rev. Lett. 65(16): 2023-2026.

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Keller R, Deicher M, Pfeiffer W, Skudlik H, Steiner D, Wichert T. Copper in silicon. Phys. Rev. Lett. 1990;65(16):2023-2026.
Keller, R., Deicher, M., Pfeiffer, W., Skudlik, H., Steiner, D., & Wichert, T. (1990). Copper in silicon. Phys. Rev. Lett., 65(16), 2023-2026.
Keller, R., Deicher, M., Pfeiffer, W., Skudlik, H., Steiner, D., and Wichert, T. (1990). Copper in silicon. Phys. Rev. Lett. 65, 2023-2026.
Keller, R., et al., 1990. Copper in silicon. Phys. Rev. Lett., 65(16), p 2023-2026.
R. Keller, et al., “Copper in silicon”, Phys. Rev. Lett., vol. 65, 1990, pp. 2023-2026.
Keller, R., Deicher, M., Pfeiffer, W., Skudlik, H., Steiner, D., Wichert, T.: Copper in silicon. Phys. Rev. Lett. 65, 2023-2026 (1990).
Keller, R., Deicher, M., Pfeiffer, Walter, Skudlik, H., Steiner, D., and Wichert, Th. “Copper in silicon”. Phys. Rev. Lett. 65.16 (1990): 2023-2026.
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4 Citations in Europe PMC

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Interaction between copper and point defects in silicon irradiated with 2-MeV electrons.
Aboelfotoh MO, Svensson BG., Phys. Rev., B Condens. Matter 52(4), 1995
PMID: 9981318
H passivation of shallow acceptors in Si studied by use of the perturbed- gamma gamma -angular-correlation technique.
Skudlik H, Deicher M, Keller R, Magerle R, Pfeiffer W, Pross P, Recknagel E, Wichert T., Phys. Rev., B Condens. Matter 46(4), 1992
PMID: 10003893
Influence of electronic parameters on the electric-field gradients induced by H at the probe atom 111In/111Cd in Si.
Skudlik H, Deicher M, Keller R, Magerle R, Pfeiffer W, Steiner D, Recknagel E, Wichert T., Phys. Rev., B Condens. Matter 46(4), 1992
PMID: 10003892
Titanium and copper in Si: Barriers for diffusion and interactions with hydrogen.
Woon DE, Marynick DS, Estreicher SK., Phys. Rev., B Condens. Matter 45(23), 1992
PMID: 10001422

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