Peculiarities of photoactivation and distribution of temperature in semiconductors under conditions of double frequency influence

Kakorin S, Komolov V, Lebenson M (1982)
Letters to Journal of Technical Physics 8: 513-517.

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Zeitschriftenaufsatz | Veröffentlicht | Russisch
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Letters to Journal of Technical Physics
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513-517
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Kakorin S, Komolov V, Lebenson M. Peculiarities of photoactivation and distribution of temperature in semiconductors under conditions of double frequency influence. Letters to Journal of Technical Physics. 1982;8:513-517.
Kakorin, S., Komolov, V., & Lebenson, M. (1982). Peculiarities of photoactivation and distribution of temperature in semiconductors under conditions of double frequency influence. Letters to Journal of Technical Physics, 8, 513-517.
Kakorin, S., Komolov, V., and Lebenson, M. (1982). Peculiarities of photoactivation and distribution of temperature in semiconductors under conditions of double frequency influence. Letters to Journal of Technical Physics 8, 513-517.
Kakorin, S., Komolov, V., & Lebenson, M., 1982. Peculiarities of photoactivation and distribution of temperature in semiconductors under conditions of double frequency influence. Letters to Journal of Technical Physics, 8, p 513-517.
S. Kakorin, V. Komolov, and M. Lebenson, “Peculiarities of photoactivation and distribution of temperature in semiconductors under conditions of double frequency influence”, Letters to Journal of Technical Physics, vol. 8, 1982, pp. 513-517.
Kakorin, S., Komolov, V., Lebenson, M.: Peculiarities of photoactivation and distribution of temperature in semiconductors under conditions of double frequency influence. Letters to Journal of Technical Physics. 8, 513-517 (1982).
Kakorin, Sergej, Komolov, V., and Lebenson, M. “Peculiarities of photoactivation and distribution of temperature in semiconductors under conditions of double frequency influence”. Letters to Journal of Technical Physics 8 (1982): 513-517.

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