Comparison between computational modeling and experiment for a CVD growth process of silicon films

Atakan B, Hofstätter M, Kohse-Höinghaus K (2001)
proceedings of the Electrochemical Society 2001-13: 268-275.

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Atakan B, Hofstätter M, Kohse-Höinghaus K. Comparison between computational modeling and experiment for a CVD growth process of silicon films. proceedings of the Electrochemical Society. 2001;2001-13:268-275.
Atakan, B., Hofstätter, M., & Kohse-Höinghaus, K. (2001). Comparison between computational modeling and experiment for a CVD growth process of silicon films. proceedings of the Electrochemical Society, 2001-13, 268-275.
Atakan, B., Hofstätter, M., and Kohse-Höinghaus, K. (2001). Comparison between computational modeling and experiment for a CVD growth process of silicon films. proceedings of the Electrochemical Society 2001-13, 268-275.
Atakan, B., Hofstätter, M., & Kohse-Höinghaus, K., 2001. Comparison between computational modeling and experiment for a CVD growth process of silicon films. proceedings of the Electrochemical Society, 2001-13, p 268-275.
B. Atakan, M. Hofstätter, and K. Kohse-Höinghaus, “Comparison between computational modeling and experiment for a CVD growth process of silicon films”, proceedings of the Electrochemical Society, vol. 2001-13, 2001, pp. 268-275.
Atakan, B., Hofstätter, M., Kohse-Höinghaus, K.: Comparison between computational modeling and experiment for a CVD growth process of silicon films. proceedings of the Electrochemical Society. 2001-13, 268-275 (2001).
Atakan, Burak, Hofstätter, Michael, and Kohse-Höinghaus, Katharina. “Comparison between computational modeling and experiment for a CVD growth process of silicon films”. proceedings of the Electrochemical Society 2001-13 (2001): 268-275.
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