Metal/Silicon multilayers produced by low temperature MOCVD

Hamelmann F, Haindl G, Hartwich J, Klipp A, Majkova E, Kleineberg U, Jutzi P, Heinzmann U (1999)
Mater.Res.Soc.Proc. 555: 19-19.

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Abstract
W/Si and Mo/Si multilayers with 20 periods (doublelayer spacing d = 24nm) were deposited on silicon substrates using (remote-) plasma-enhanced MOCVD. The substrate temperature was below 2000C, which is necessary to avoid interdiffusion ofthe layers. The layer thickness and growth was controlled by an in situ soft x-ray reflectivity measurement. The characterisation of the multilayers showed an excellent growth of the silicon layers, while the metal layers are rough with embedded crystallites.
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Hamelmann F, Haindl G, Hartwich J, et al. Metal/Silicon multilayers produced by low temperature MOCVD. Mater.Res.Soc.Proc. 1999;555:19-19.
Hamelmann, F., Haindl, G., Hartwich, J., Klipp, A., Majkova, E., Kleineberg, U., Jutzi, P., et al. (1999). Metal/Silicon multilayers produced by low temperature MOCVD. Mater.Res.Soc.Proc., 555, 19-19.
Hamelmann, F., Haindl, G., Hartwich, J., Klipp, A., Majkova, E., Kleineberg, U., Jutzi, P., and Heinzmann, U. (1999). Metal/Silicon multilayers produced by low temperature MOCVD. Mater.Res.Soc.Proc. 555, 19-19.
Hamelmann, F., et al., 1999. Metal/Silicon multilayers produced by low temperature MOCVD. Mater.Res.Soc.Proc., 555, p 19-19.
F. Hamelmann, et al., “Metal/Silicon multilayers produced by low temperature MOCVD”, Mater.Res.Soc.Proc., vol. 555, 1999, pp. 19-19.
Hamelmann, F., Haindl, G., Hartwich, J., Klipp, A., Majkova, E., Kleineberg, U., Jutzi, P., Heinzmann, U.: Metal/Silicon multilayers produced by low temperature MOCVD. Mater.Res.Soc.Proc. 555, 19-19 (1999).
Hamelmann, Frank, Haindl, G., Hartwich, J., Klipp, A., Majkova, E., Kleineberg, U., Jutzi, P., and Heinzmann, Ulrich. “Metal/Silicon multilayers produced by low temperature MOCVD”. Mater.Res.Soc.Proc. 555 (1999): 19-19.
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