Metal/Silicon multilayers produced by low temperature MOCVD

Hamelmann F, Haindl G, Hartwich J, Klipp A, Majkova E, Kleineberg U, Jutzi P, Heinzmann U (1999)
Mater.Res.Soc.Proc. 555: 19-19.

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Zeitschriftenaufsatz | Englisch
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Abstract / Bemerkung
W/Si and Mo/Si multilayers with 20 periods (doublelayer spacing d = 24nm) were deposited on silicon substrates using (remote-) plasma-enhanced MOCVD. The substrate temperature was below 2000C, which is necessary to avoid interdiffusion ofthe layers. The layer thickness and growth was controlled by an in situ soft x-ray reflectivity measurement. The characterisation of the multilayers showed an excellent growth of the silicon layers, while the metal layers are rough with embedded crystallites.
Erscheinungsjahr
Zeitschriftentitel
Mater.Res.Soc.Proc.
Band
555
Seite
19-19
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Hamelmann F, Haindl G, Hartwich J, et al. Metal/Silicon multilayers produced by low temperature MOCVD. Mater.Res.Soc.Proc. 1999;555:19-19.
Hamelmann, F., Haindl, G., Hartwich, J., Klipp, A., Majkova, E., Kleineberg, U., Jutzi, P., et al. (1999). Metal/Silicon multilayers produced by low temperature MOCVD. Mater.Res.Soc.Proc., 555, 19-19.
Hamelmann, F., Haindl, G., Hartwich, J., Klipp, A., Majkova, E., Kleineberg, U., Jutzi, P., and Heinzmann, U. (1999). Metal/Silicon multilayers produced by low temperature MOCVD. Mater.Res.Soc.Proc. 555, 19-19.
Hamelmann, F., et al., 1999. Metal/Silicon multilayers produced by low temperature MOCVD. Mater.Res.Soc.Proc., 555, p 19-19.
F. Hamelmann, et al., “Metal/Silicon multilayers produced by low temperature MOCVD”, Mater.Res.Soc.Proc., vol. 555, 1999, pp. 19-19.
Hamelmann, F., Haindl, G., Hartwich, J., Klipp, A., Majkova, E., Kleineberg, U., Jutzi, P., Heinzmann, U.: Metal/Silicon multilayers produced by low temperature MOCVD. Mater.Res.Soc.Proc. 555, 19-19 (1999).
Hamelmann, Frank, Haindl, G., Hartwich, J., Klipp, A., Majkova, E., Kleineberg, U., Jutzi, P., and Heinzmann, Ulrich. “Metal/Silicon multilayers produced by low temperature MOCVD”. Mater.Res.Soc.Proc. 555 (1999): 19-19.

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