Growth of galliumnitride on sapphire and silicon using propylamine as nitrogen precursor

Atakan B, Liu Z-J (2001)
JOURNAL DE PHYSIQUE IV 11(PR3): 525-530.

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Atakan B, Liu Z-J. Growth of galliumnitride on sapphire and silicon using propylamine as nitrogen precursor. JOURNAL DE PHYSIQUE IV. 2001;11(PR3):525-530.
Atakan, B., & Liu, Z. - J. (2001). Growth of galliumnitride on sapphire and silicon using propylamine as nitrogen precursor. JOURNAL DE PHYSIQUE IV, 11(PR3), 525-530.
Atakan, B., and Liu, Z. - J. (2001). Growth of galliumnitride on sapphire and silicon using propylamine as nitrogen precursor. JOURNAL DE PHYSIQUE IV 11, 525-530.
Atakan, B., & Liu, Z.-J., 2001. Growth of galliumnitride on sapphire and silicon using propylamine as nitrogen precursor. JOURNAL DE PHYSIQUE IV, 11(PR3), p 525-530.
B. Atakan and Z.-J. Liu, “Growth of galliumnitride on sapphire and silicon using propylamine as nitrogen precursor”, JOURNAL DE PHYSIQUE IV, vol. 11, 2001, pp. 525-530.
Atakan, B., Liu, Z.-J.: Growth of galliumnitride on sapphire and silicon using propylamine as nitrogen precursor. JOURNAL DE PHYSIQUE IV. 11, 525-530 (2001).
Atakan, Burak, and Liu, Zhi-Jie. “Growth of galliumnitride on sapphire and silicon using propylamine as nitrogen precursor”. JOURNAL DE PHYSIQUE IV 11.PR3 (2001): 525-530.
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