Nanostructuring of silicon by electron beam lithography of self-assembled hydroxybiphenyl monolayers

Küller A, Eck W, Stadler V, Geyer W, Gölzhäuser A (2003)
Appl. Phys. Lett. 82: 3776-3778.

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Küller A, Eck W, Stadler V, Geyer W, Gölzhäuser A. Nanostructuring of silicon by electron beam lithography of self-assembled hydroxybiphenyl monolayers. Appl. Phys. Lett. 2003;82:3776-3778.
Küller, A., Eck, W., Stadler, V., Geyer, W., & Gölzhäuser, A. (2003). Nanostructuring of silicon by electron beam lithography of self-assembled hydroxybiphenyl monolayers. Appl. Phys. Lett., 82, 3776-3778.
Küller, A., Eck, W., Stadler, V., Geyer, W., and Gölzhäuser, A. (2003). Nanostructuring of silicon by electron beam lithography of self-assembled hydroxybiphenyl monolayers. Appl. Phys. Lett. 82, 3776-3778.
Küller, A., et al., 2003. Nanostructuring of silicon by electron beam lithography of self-assembled hydroxybiphenyl monolayers. Appl. Phys. Lett., 82, p 3776-3778.
A. Küller, et al., “Nanostructuring of silicon by electron beam lithography of self-assembled hydroxybiphenyl monolayers”, Appl. Phys. Lett., vol. 82, 2003, pp. 3776-3778.
Küller, A., Eck, W., Stadler, V., Geyer, W., Gölzhäuser, A.: Nanostructuring of silicon by electron beam lithography of self-assembled hydroxybiphenyl monolayers. Appl. Phys. Lett. 82, 3776-3778 (2003).
Küller, A., Eck, W., Stadler, V., Geyer, W., and Gölzhäuser, Armin. “Nanostructuring of silicon by electron beam lithography of self-assembled hydroxybiphenyl monolayers”. Appl. Phys. Lett. 82 (2003): 3776-3778.
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