Interlayer exchange coupling and current induced magnetization switching in magnetic tunnel junctions with MgO wedge barrier

Skowronski W, Stobiecki T, Wrona J, Rott K, Thomas A, Reiss G, van Dijken S (2010)
In: JOURNAL OF APPLIED PHYSICS. 107. AMER INST PHYSICS.

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Current induced magnetization switching and interlayer exchange coupling (IEC) in sputtered CoFeB/MgO/CoFeB exchange-biased magnetic tunnel junctions with an extremely thin (0.96-0.62 nm) MgO wedge barrier is investigated. The IEC is found to be ferromagnetic for all samples and the associated energy increases exponentially down to a barrier thickness of 0.7 nm. Nanopillars with resistance area product ranging from 1.8 to 10 Omega mu m(2) and sizes of 0.13 mu m(2) down to 0.03 mu m(2) and tunneling magnetoresistance values of up to 170% were prepared. We found, that the critical current density increases with decreasing MgO barrier thickness. The experimental data and theoretical estimations show that the barrier thickness dependence of the spin transfer torque can largely be explained by a reduction in the tunnel current polarization at very small barrier thickness. (C) 2010 American Institute of Physics. [doi:10.1063/1.3387992]
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Skowronski W, Stobiecki T, Wrona J, et al. Interlayer exchange coupling and current induced magnetization switching in magnetic tunnel junctions with MgO wedge barrier. In: JOURNAL OF APPLIED PHYSICS. Vol 107. AMER INST PHYSICS; 2010.
Skowronski, W., Stobiecki, T., Wrona, J., Rott, K., Thomas, A., Reiss, G., & van Dijken, S. (2010). Interlayer exchange coupling and current induced magnetization switching in magnetic tunnel junctions with MgO wedge barrier. JOURNAL OF APPLIED PHYSICS, 107(9).
Skowronski, W., Stobiecki, T., Wrona, J., Rott, K., Thomas, A., Reiss, G., and van Dijken, S. (2010). “Interlayer exchange coupling and current induced magnetization switching in magnetic tunnel junctions with MgO wedge barrier” in JOURNAL OF APPLIED PHYSICS, vol. 107, (AMER INST PHYSICS).
Skowronski, W., et al., 2010. Interlayer exchange coupling and current induced magnetization switching in magnetic tunnel junctions with MgO wedge barrier. In JOURNAL OF APPLIED PHYSICS. no.107 AMER INST PHYSICS.
W. Skowronski, et al., “Interlayer exchange coupling and current induced magnetization switching in magnetic tunnel junctions with MgO wedge barrier”, JOURNAL OF APPLIED PHYSICS, vol. 107, AMER INST PHYSICS, 2010.
Skowronski, W., Stobiecki, T., Wrona, J., Rott, K., Thomas, A., Reiss, G., van Dijken, S.: Interlayer exchange coupling and current induced magnetization switching in magnetic tunnel junctions with MgO wedge barrier. JOURNAL OF APPLIED PHYSICS. 107, AMER INST PHYSICS (2010).
Skowronski, Witold, Stobiecki, Tomasz, Wrona, Jerzy, Rott, Karsten, Thomas, Andy, Reiss, Günter, and van Dijken, Sebastiaan. “Interlayer exchange coupling and current induced magnetization switching in magnetic tunnel junctions with MgO wedge barrier”. JOURNAL OF APPLIED PHYSICS. AMER INST PHYSICS, 2010.Vol. 107.
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