High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers

Heidemann B, Tappe T, Schmiedeskamp B, Heinzmann U (1993)
Thin Solid Films 228(1-2): 60-63.

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Abstract
High resolution Rutherford backscattering spectroscopy with an electrostatic analysis of the ion energy is applied to Mo/Si multilayers with a period of 7 nm. The multilayers have been produced for X-ray optical purposes by electron beam evaporation in ultrahigh vacuum at three different temperatures during deposition: 30, 150 and 200 °C. In the Rutherford backscattering spectra the layer structure is resolved in all three cases. The multilayers deposited at 150 and 200 °C show interlayers of mixed Mo and Si of different thicknesses on the two sides of a Mo layer. The most distinct layer structure is found for the 150 °C sample, whereas the spectra for the 30 °C sample indicate a larger interfacial roughness and those for the 200 °C sample larger interfacial layers of mixed mo and Si than for the 150 °C sample. On baking the multilayers to temperatures higher than 400 °C, interdiffusion of Mo and Si is observed. The multilayers deposited at 150 and 200 °C are destroyed after baking to 600 °C, whereas the multilayer deposited at 30 °C has already been destroyed after baking to 500 °C. Up to a baking temperature of 600 °C neither losses of material from the stack nor accumulation of Mo or Si at the surface or the interface between the stack and substrate are observed.
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Heidemann B, Tappe T, Schmiedeskamp B, Heinzmann U. High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers. Thin Solid Films. 1993;228(1-2):60-63.
Heidemann, B., Tappe, T., Schmiedeskamp, B., & Heinzmann, U. (1993). High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers. Thin Solid Films, 228(1-2), 60-63.
Heidemann, B., Tappe, T., Schmiedeskamp, B., and Heinzmann, U. (1993). High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers. Thin Solid Films 228, 60-63.
Heidemann, B., et al., 1993. High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers. Thin Solid Films, 228(1-2), p 60-63.
B. Heidemann, et al., “High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers”, Thin Solid Films, vol. 228, 1993, pp. 60-63.
Heidemann, B., Tappe, T., Schmiedeskamp, B., Heinzmann, U.: High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers. Thin Solid Films. 228, 60-63 (1993).
Heidemann, B., Tappe, T., Schmiedeskamp, B., and Heinzmann, Ulrich. “High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers”. Thin Solid Films 228.1-2 (1993): 60-63.
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