Atomic hydrogen concentration profiles at filaments used for chemical vapor deposition of diamond

Schäfer L, Klages C-P, Meier U, Kohse-Höinghaus K (1991)
Applied Physics Letters 58(6): 571-573.

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Zeitschriftenaufsatz | Veröffentlicht | Englisch
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Abstract / Bemerkung
The quantitative determination of atomic hydrogen concentrations cH in the vicinity of hot filaments is performed with two-photon laser-induced fluorescence. The measurements yield atomic hydrogen concentration profiles up to 28 mm from the filament surface with a spatial resolution of about 0.5 mm. The nonequilibrium nature of the hydrogen dissociation on the filament surface results in a saturation of hydrogen concentration profiles C H([gamma]) for gas pressures above 10 mbar. Atomic concentrations in immediate vicinity of the filament are significantly lower than expected from thermodynamical calculations and depend on the filament diameter. Addition of methane results in a decrease of C H by more than 30% near the filament and a steeper C H([gamma]) dependence, demonstrating the accelerated consumption of H atoms by the presence of hydrocarbon species. H concentration profiles for Ta, Ir, and W filaments show a dependence on filament materials which might be taken into account when selecting filament materials for chemical vapor deposition of diamond.
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Zeitschriftentitel
Applied Physics Letters
Band
58
Zeitschriftennummer
6
Seite
571-573
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Schäfer L, Klages C-P, Meier U, Kohse-Höinghaus K. Atomic hydrogen concentration profiles at filaments used for chemical vapor deposition of diamond. Applied Physics Letters. 1991;58(6):571-573.
Schäfer, L., Klages, C. - P., Meier, U., & Kohse-Höinghaus, K. (1991). Atomic hydrogen concentration profiles at filaments used for chemical vapor deposition of diamond. Applied Physics Letters, 58(6), 571-573. doi:10.1063/1.104590
Schäfer, L., Klages, C. - P., Meier, U., and Kohse-Höinghaus, K. (1991). Atomic hydrogen concentration profiles at filaments used for chemical vapor deposition of diamond. Applied Physics Letters 58, 571-573.
Schäfer, L., et al., 1991. Atomic hydrogen concentration profiles at filaments used for chemical vapor deposition of diamond. Applied Physics Letters, 58(6), p 571-573.
L. Schäfer, et al., “Atomic hydrogen concentration profiles at filaments used for chemical vapor deposition of diamond”, Applied Physics Letters, vol. 58, 1991, pp. 571-573.
Schäfer, L., Klages, C.-P., Meier, U., Kohse-Höinghaus, K.: Atomic hydrogen concentration profiles at filaments used for chemical vapor deposition of diamond. Applied Physics Letters. 58, 571-573 (1991).
Schäfer, Lothar, Klages, Claus-Peter, Meier, Ulrich, and Kohse-Höinghaus, Katharina. “Atomic hydrogen concentration profiles at filaments used for chemical vapor deposition of diamond”. Applied Physics Letters 58.6 (1991): 571-573.
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