Emission of circularly polarized recombination radiation from p-doped GaAs and GaAs0.62P0.38 under the impact of polarized electrons

Fromme B, Baum G, Göckel D, Raith W (1989)
Phys. Rev. B 40(18): 12312-12318.

Download
OA
Journal Article | Published | English
Author
; ; ;
Abstract
Circularly polarized light is emitted in radiative transitions of polarized electrons from the conduction to the valence band in GaAs or GaAs1-xPx crystals. The degree of light polarization is directly related to the polarization of the conduction-band electrons at the instant of recombination and allows conclusions about the depolarization of electrons in the conduction band. The depolarization is caused by spin-relaxation processes. The efficiency of these processes depends on crystal type, crystal temperature, degree of doping, and kinetic energy of the electrons. Highly p-doped GaAs and GaAs0.62P0.38 crystals (NA>1×10^19 atoms/cm^3) were bombarded with polarized electrons (initial polarization 38 %), and the spectral distribution and the circular polarization of the emitted recombination radiation were measured. The initial kinetic energy of the electrons in the conduction band was varied between 5 and 1000 eV. The measurements of the spectral distribution show that the electrons are thermalized before recombination occurs, independent of their initial energy. An important thermalization process in this energy range is the excitation of crystal electrons by electron-hole pair creation. The circular polarization of the recombination radiation lies below 1% in the whole energy range. It decreases with increasing electron energy but is still of measurable magnitude at 100 eV in the case of GaAs0.62P0.38. The circular polarization is smaller for GaAs than for GaAs0.62P0.38, which we attribute to more efficient spin relaxation in GaAs.
Publishing Year
ISSN
PUB-ID

Cite this

Fromme B, Baum G, Göckel D, Raith W. Emission of circularly polarized recombination radiation from p-doped GaAs and GaAs0.62P0.38 under the impact of polarized electrons. Phys. Rev. B. 1989;40(18):12312-12318.
Fromme, B., Baum, G., Göckel, D., & Raith, W. (1989). Emission of circularly polarized recombination radiation from p-doped GaAs and GaAs0.62P0.38 under the impact of polarized electrons. Phys. Rev. B, 40(18), 12312-12318.
Fromme, B., Baum, G., Göckel, D., and Raith, W. (1989). Emission of circularly polarized recombination radiation from p-doped GaAs and GaAs0.62P0.38 under the impact of polarized electrons. Phys. Rev. B 40, 12312-12318.
Fromme, B., et al., 1989. Emission of circularly polarized recombination radiation from p-doped GaAs and GaAs0.62P0.38 under the impact of polarized electrons. Phys. Rev. B, 40(18), p 12312-12318.
B. Fromme, et al., “Emission of circularly polarized recombination radiation from p-doped GaAs and GaAs0.62P0.38 under the impact of polarized electrons”, Phys. Rev. B, vol. 40, 1989, pp. 12312-12318.
Fromme, B., Baum, G., Göckel, D., Raith, W.: Emission of circularly polarized recombination radiation from p-doped GaAs and GaAs0.62P0.38 under the impact of polarized electrons. Phys. Rev. B. 40, 12312-12318 (1989).
Fromme, Bärbel, Baum, Günter, Göckel, Dorothee, and Raith, Wilhelm. “Emission of circularly polarized recombination radiation from p-doped GaAs and GaAs0.62P0.38 under the impact of polarized electrons”. Phys. Rev. B 40.18 (1989): 12312-12318.
Main File(s)
File Name
Access Level
OA Open Access

This data publication is cited in the following publications:
This publication cites the following data publications:

2 Citations in Europe PMC

Data provided by Europe PubMed Central.

Observation of spin-polarized-electron tunneling from a ferromagnet into GaAs.
Alvarado SF, Renaud P., Phys. Rev. Lett. 68(9), 1992
PMID: 10046153
Low-energy cathodoluminescence experiment with polarized electrons and a negative-electron-affinity GaAs target.
Gockel D, Baum G, Fromme B, Lehmann V V, Lohmann B, Raith W., Phys. Rev., B Condens. Matter 42(11), 1990
PMID: 9994854

56 References

Data provided by Europe PubMed Central.

RECOMBINATION RADIATION IN GaAs BY OPTICAL AND ELECTRICAL INJECTION
Nathan, Applied Physics Letters 1(4), 1962
THE EFFECT OF Cu IMPURITIES ON INFRARED ELECTROLUMINESCENCE IN GaAs p-n JUNCTIONS
Larsen, Applied Physics Letters 3(7), 1963
RECOMBINATION SCHEME AND INTRINSIC GAP VARIATION IN GaAs[sub 1−x][sup −]P[sub x] SEMICONDUCTORS FROM ELECTRON BEAM AND p-n DIODE EXCITATION
Cusano, Applied Physics Letters 5(7), 1964
Electroluminescence and Lasing Action in GaAsxP1−x
Pilkuhn, Journal of Applied Physics 36(3), 1965
The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP
Thurmond, Journal of The Electrochemical Society 122(8), 1975

Martinelli, Proceedings of the IEEE 62(10), 1974

Export

0 Marked Publications

Open Data PUB

Web of Science

View record in Web of Science®

Sources

PMID: 9991863
PubMed | Europe PMC

Search this title in

Google Scholar