Percolation threshold and mean grain size in AlxSi1-x thin films

Reiss G, Vancea J, Hoffmann H (1985)
Journal of Physics, C: Solid State Physics 18(21): L657-L660.

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We determined the critical composition xc of the percolation threshold in polycrystalline AIxSi1-x thin films with a new method, using structural arguments only. The result xc = (0.55 + - 0.05) agrees with the results of the commonly used methods. Moreover, our model explains the wide spread of experimental values of xc as reported in the literature.
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Reiss G, Vancea J, Hoffmann H. Percolation threshold and mean grain size in AlxSi1-x thin films. Journal of Physics, C: Solid State Physics. 1985;18(21):L657-L660.
Reiss, G., Vancea, J., & Hoffmann, H. (1985). Percolation threshold and mean grain size in AlxSi1-x thin films. Journal of Physics, C: Solid State Physics, 18(21), L657-L660.
Reiss, G., Vancea, J., and Hoffmann, H. (1985). Percolation threshold and mean grain size in AlxSi1-x thin films. Journal of Physics, C: Solid State Physics 18, L657-L660.
Reiss, G., Vancea, J., & Hoffmann, H., 1985. Percolation threshold and mean grain size in AlxSi1-x thin films. Journal of Physics, C: Solid State Physics, 18(21), p L657-L660.
G. Reiss, J. Vancea, and H. Hoffmann, “Percolation threshold and mean grain size in AlxSi1-x thin films”, Journal of Physics, C: Solid State Physics, vol. 18, 1985, pp. L657-L660.
Reiss, G., Vancea, J., Hoffmann, H.: Percolation threshold and mean grain size in AlxSi1-x thin films. Journal of Physics, C: Solid State Physics. 18, L657-L660 (1985).
Reiss, Günter, Vancea, Johann, and Hoffmann, Horst. “Percolation threshold and mean grain size in AlxSi1-x thin films”. Journal of Physics, C: Solid State Physics 18.21 (1985): L657-L660.
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