(ME5C5)SIH3 AND (ME5C5)2SIH2 AS PRECURSORS FOR LOW-TEMPERATURE REMOTE PLASMA-ENHANCED CVD OF THIN SI3N4 AND SIO2-FILMS

DAHLHAUS J, Jutzi P, FRENCK HJ, KULISCH W (1993)
ADVANCED MATERIALS 5(5): 377-380.

Journal Article | Published | English

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Abstract
Silicon nitride (Si3N4) and silica (SiO2) thin films are of interest for applications in microelectronics and optics. Non-hazardous alternatives to silane (SiH4) as the silicon precursor in the chemical vapor deposition (CVD) of these materials are an attractive target for research. It is shown that pentamethylcyclopentadiene-substituted silanes offer the opportunity to tailor precursors for particular CVD requirements.
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DAHLHAUS J, Jutzi P, FRENCK HJ, KULISCH W. (ME5C5)SIH3 AND (ME5C5)2SIH2 AS PRECURSORS FOR LOW-TEMPERATURE REMOTE PLASMA-ENHANCED CVD OF THIN SI3N4 AND SIO2-FILMS. ADVANCED MATERIALS. 1993;5(5):377-380.
DAHLHAUS, J., Jutzi, P., FRENCK, H. J., & KULISCH, W. (1993). (ME5C5)SIH3 AND (ME5C5)2SIH2 AS PRECURSORS FOR LOW-TEMPERATURE REMOTE PLASMA-ENHANCED CVD OF THIN SI3N4 AND SIO2-FILMS. ADVANCED MATERIALS, 5(5), 377-380.
DAHLHAUS, J., Jutzi, P., FRENCK, H. J., and KULISCH, W. (1993). (ME5C5)SIH3 AND (ME5C5)2SIH2 AS PRECURSORS FOR LOW-TEMPERATURE REMOTE PLASMA-ENHANCED CVD OF THIN SI3N4 AND SIO2-FILMS. ADVANCED MATERIALS 5, 377-380.
DAHLHAUS, J., et al., 1993. (ME5C5)SIH3 AND (ME5C5)2SIH2 AS PRECURSORS FOR LOW-TEMPERATURE REMOTE PLASMA-ENHANCED CVD OF THIN SI3N4 AND SIO2-FILMS. ADVANCED MATERIALS, 5(5), p 377-380.
J. DAHLHAUS, et al., “(ME5C5)SIH3 AND (ME5C5)2SIH2 AS PRECURSORS FOR LOW-TEMPERATURE REMOTE PLASMA-ENHANCED CVD OF THIN SI3N4 AND SIO2-FILMS”, ADVANCED MATERIALS, vol. 5, 1993, pp. 377-380.
DAHLHAUS, J., Jutzi, P., FRENCK, H.J., KULISCH, W.: (ME5C5)SIH3 AND (ME5C5)2SIH2 AS PRECURSORS FOR LOW-TEMPERATURE REMOTE PLASMA-ENHANCED CVD OF THIN SI3N4 AND SIO2-FILMS. ADVANCED MATERIALS. 5, 377-380 (1993).
DAHLHAUS, J, Jutzi, Peter, FRENCK, HJ, and KULISCH, W. “(ME5C5)SIH3 AND (ME5C5)2SIH2 AS PRECURSORS FOR LOW-TEMPERATURE REMOTE PLASMA-ENHANCED CVD OF THIN SI3N4 AND SIO2-FILMS”. ADVANCED MATERIALS 5.5 (1993): 377-380.
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