Thermal stability and diffusion processes in MoxSiy/Si multilayers studied with high-resolution RBS

Heidemann B, Tappe T, Schmiedeskamp B, Heinzmann U (1995)
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER 99(1): 37-42.

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Abstract
MoxSiy/Si multilayers with a period thickness of similar to 7.5 nm and bilayers MoxSiy/Si have been fabricated by e(-) -beam evaporation in UHV at a deposition temperature of 150 degrees C [ 1]. The composition of the as-deposited layer systems and changes in the composition after baking the samples have been studied with high-resolution RBS. For a multilayer with a mixing ratio y/x similar or equal to 2, no interdiffusion is observed up to a baking temperature of 830 degrees C. For samples with a mixing ratio y/x similar or equal to 1, diffusion is observed up to a baking temperature of 630 degrees C, resulting in a mixing ratio close to y/x similar or equal to 2. This mixing ratio remains almost stable up to similar to 830 degrees C, and considerable interdiffusion is only observed in those systems where regions with a mixing ratio smaller than 2 still exist. Possible reasons for the high thermal stability of the samples are the lack of a concentration gradient for Si in the system Si/Mo0.(3) over barSi0.(6) over bar and/orthe crystallization of MoSi2.
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Heidemann B, Tappe T, Schmiedeskamp B, Heinzmann U. Thermal stability and diffusion processes in MoxSiy/Si multilayers studied with high-resolution RBS. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER. 1995;99(1):37-42.
Heidemann, B., Tappe, T., Schmiedeskamp, B., & Heinzmann, U. (1995). Thermal stability and diffusion processes in MoxSiy/Si multilayers studied with high-resolution RBS. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 99(1), 37-42.
Heidemann, B., Tappe, T., Schmiedeskamp, B., and Heinzmann, U. (1995). Thermal stability and diffusion processes in MoxSiy/Si multilayers studied with high-resolution RBS. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER 99, 37-42.
Heidemann, B., et al., 1995. Thermal stability and diffusion processes in MoxSiy/Si multilayers studied with high-resolution RBS. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 99(1), p 37-42.
B. Heidemann, et al., “Thermal stability and diffusion processes in MoxSiy/Si multilayers studied with high-resolution RBS”, ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, vol. 99, 1995, pp. 37-42.
Heidemann, B., Tappe, T., Schmiedeskamp, B., Heinzmann, U.: Thermal stability and diffusion processes in MoxSiy/Si multilayers studied with high-resolution RBS. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER. 99, 37-42 (1995).
Heidemann, B., Tappe, T., Schmiedeskamp, B., and Heinzmann, Ulrich. “Thermal stability and diffusion processes in MoxSiy/Si multilayers studied with high-resolution RBS”. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER 99.1 (1995): 37-42.
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