Thermal stability of W1-xSix/Si multilayers under rapid thermal annealing

Senderak R, Jergel M, Luby S, Majkova E, Holy V, Haindl G, Hamelmann F, Kleineberg U, Heinzmann U (1997)
JOURNAL OF APPLIED PHYSICS 81(5): 2229-2235.

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Abstract
W1-xSix/Si multilayers (MLs) (x less than or equal to 0.66) were deposited onto oxidized Si substrates, heat treated by rapid thermal (RTA) and standard furnace annealing up to 1000 degrees C for 30 s and 25 min, respectively, and analyzed by various x-ray techniques and Rutherford backscattering spectrometry. W1-xSix/Si MLs are more stable the higher the value of x because the driving force for interdiffusion is suppressed by the doping; the temperature for complete interdiffusion increases from 500 to 850 degrees C as x increases from 0 to 0.66. The as-deposited MLs were amorphous. Their thermal stability increases with increasing x. The interface roughness is independent of x but increases with increasing RTA temperature. The reflectivity of W1-xSix/Si MLs is lower than that of W/Si because of lower optical contrast. (C) 1997 American Institute of Physics.
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Senderak R, Jergel M, Luby S, et al. Thermal stability of W1-xSix/Si multilayers under rapid thermal annealing. JOURNAL OF APPLIED PHYSICS. 1997;81(5):2229-2235.
Senderak, R., Jergel, M., Luby, S., Majkova, E., Holy, V., Haindl, G., Hamelmann, F., et al. (1997). Thermal stability of W1-xSix/Si multilayers under rapid thermal annealing. JOURNAL OF APPLIED PHYSICS, 81(5), 2229-2235.
Senderak, R., Jergel, M., Luby, S., Majkova, E., Holy, V., Haindl, G., Hamelmann, F., Kleineberg, U., and Heinzmann, U. (1997). Thermal stability of W1-xSix/Si multilayers under rapid thermal annealing. JOURNAL OF APPLIED PHYSICS 81, 2229-2235.
Senderak, R., et al., 1997. Thermal stability of W1-xSix/Si multilayers under rapid thermal annealing. JOURNAL OF APPLIED PHYSICS, 81(5), p 2229-2235.
R. Senderak, et al., “Thermal stability of W1-xSix/Si multilayers under rapid thermal annealing”, JOURNAL OF APPLIED PHYSICS, vol. 81, 1997, pp. 2229-2235.
Senderak, R., Jergel, M., Luby, S., Majkova, E., Holy, V., Haindl, G., Hamelmann, F., Kleineberg, U., Heinzmann, U.: Thermal stability of W1-xSix/Si multilayers under rapid thermal annealing. JOURNAL OF APPLIED PHYSICS. 81, 2229-2235 (1997).
Senderak, R, Jergel, M, Luby, S, Majkova, E, Holy, V, Haindl, G, Hamelmann, Frank, Kleineberg, U, and Heinzmann, Ulrich. “Thermal stability of W1-xSix/Si multilayers under rapid thermal annealing”. JOURNAL OF APPLIED PHYSICS 81.5 (1997): 2229-2235.
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